Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

Morishita, Hiroki; Vlasenko, L. S.; Semba, Kouichi; Sawano, Kentarou; Shiraki, Yasuhiro; Eto, Mikio; Itoh, Kohei M.

doi:10.1103/physrevb.80.205206

Cited by 39 publications

(54 citation statements)

References 41 publications

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“…Mixing of the Zeeman sublevels |m S ,m I , achieved in the regime where the hyperfine coupling competes with the external field, which we call the "intermediate-field regime," is not unexpected and has even been investigated for Si:P for weak magnetic fields. 3 However, for Si:Bi, this regime is attained for magnetic fields B 0.1-0.6 T, which are moderate, but within the normal EPR range. In a previous paper, 7 we identified interesting consequences in this range of magnetic fields.…”

Section: Introductionmentioning

confidence: 99%

“…The key advantages are the comparatively long decoherence times, which have been measured to be of order milliseconds for the electron spin for natural Si:P. They are of order of seconds for the nuclear spin, so the nuclear spin has been identified 1 as a resource for storing the quantum information. For all but the weakest magnetic fields (i.e., B 0 200 G), 3 the electron and nuclear spins are uncoupled so they may be addressed and manipulated independently by a combination of microwave (mw) and radio-frequency (rf) pulses, respectively. The two possible electron-spin transitions correspond to EPR spectral lines, while the nuclear spin transitions are NMR lines.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of quantum coherence in bismuth-doped silicon: A system of strongly coupled spin qubits

et al. 2012

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There is a growing interest in bismuth-doped silicon (Si:Bi) as an alternative to the well-studied proposals for silicon-based quantum information processing (QIP) using phosphorus-doped silicon (Si:P). We focus here on the implications of its anomalously strong hyperfine coupling. In particular, we analyze in detail the regime where recent pulsed magnetic resonance experiments have demonstrated the potential for orders of magnitude speedup in quantum gates by exploiting transitions that are electron paramagnetic resonance (EPR) forbidden at high fields. We also present calculations using a phenomenological Markovian master equation, which models the decoherence of the electron spin due to Gaussian temporal magnetic field perturbations. The model quantifies the advantages of certain "optimal working points" identified as the df /dB = 0 regions, where f is the transition frequency, which come in the form of frequency minima and maxima. We show that at such regions, dephasing due to the interaction of the electron spin with a fluctuating magnetic field in the z direction (usually adiabatic) is completely removed.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Analysis of quantum coherence in bismuth-doped silicon: A system of strongly coupled spin qubits

et al. 2012

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“…Figure 3 shows a comparison between FM EDMR spectra (blue) and AM EDMR spectra (red) using a 1 kHz modulation frequency under white light excitation. The central peak is due to surface defects while the two outer lines correspond to the 4.2 mT (117.54 MHz) hyperfine split lines of the phosphorus donors (g = 1.9985) [18,29]. The transconductance gain of the current preamplifier was used to calculate the fractional current change from the measured signal voltage.…”

Section: A Microwave Modulationmentioning

confidence: 99%

“…The influence of this optical excitation on the SDR rates and the observed EDMR signal is still not well understood. While most EDMR experiments have used white light sources for the optical excitation [17,18,26,[28][29][30], light emitting diodes [8,27] and laser excitation [16] have also been used. At cryogenic temperatures the optical penetration depth of light into silicon is known to be strongly wavelength dependent [31].…”

Section: Introductionmentioning

confidence: 99%

Optical Dependence of Electrically Detected Magnetic Resonance in Lightly Doped Si:P Devices

et al. 2017

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Electrically-detected magnetic resonance (EDMR) provides a highly sensitive method for reading out the state of donor spins in silicon. The technique relies on a spin-dependent recombination (SDR) process involving dopant spins that are coupled to interfacial defect spins near the Si/SiO2 interface. To prevent ionization of the donors, the experiments are performed at cryogenic temperatures and the mobile charge carriers needed are generated via optical excitation. The influence of this optical excitation on the SDR process and the resulting EDMR signal is still not well understood. Here, we use EDMR to characterize changes to both phosphorus and defect spin readout as a function of optical excitation using: a 980 nm laser with energy just above the silicon band edge at cryogenic temperatures; a 405 nm laser to generate hot surface-carriers; and a broadband white light source. EDMR signals are observed from the phosphorus donor and two distinct defect species in all the experiments. With near-infrared excitation, we find that the EDMR signal primarily arises from donor-defect pairs, while at higher photon energies there are significant additional contributions from defect-defect pairs. The optical penetration depth into silicon is also known to be strongly wavelength dependent at cryogenic temperatures. The energy of the optical excitation is observed to strongly modulate the kinetics of the SDR process. Careful tuning of the optical photon energy could therefore be used to control both the subset of spin pairs contributing to the EDMR signal as well as the dynamics of the SDR process.

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“…[17] In addition, we speculate that it may become possible to explore the role of contact hyperfine interactions and dynamic nuclear polarization of the phosphorus nuclear spin by itinerant non-equilibrium spin-polarized conduction electrons with NMR techniques for potential application to quantum computing schemes. [20] We acknowledge helpful comments by S. Bohacek. This work was supported by the Office of Naval Research and the National Science Foundation.…”

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confidence: 99%

Spin-Polarized Transient Electron Trapping in Phosphorus-Doped Silicon

Lü

Appelbaum

2011

Phys. Rev. Lett.

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Experimental evidence of electron spin precession during travel through the phosphorus-doped Si channel of an all-electrical device simultaneously indicates two distinct processes: (i) short timescales (≈50ps) due to purely conduction-band transport from injector to detector and (ii) long timescales (≈1ns) originating from delays associated with capture/re-emission in shallow impurity traps. The origin of this phenomenon, examined via temperature, voltage, and electron density dependence measurements, is established by means of comparison to a numerical model and is shown to reveal the participation of metastable excited states in the phosphorus impurity spectrum. This work therefore demonstrates the potential to make the study of macroscopic spin transport relevant to the quantum regime of individual spin interactions with impurities as envisioned for quantum information applications.

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Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

Cited by 39 publications

References 41 publications

Analysis of quantum coherence in bismuth-doped silicon: A system of strongly coupled spin qubits

Analysis of quantum coherence in bismuth-doped silicon: A system of strongly coupled spin qubits

Optical Dependence of Electrically Detected Magnetic Resonance in Lightly Doped Si:P Devices

Spin-Polarized Transient Electron Trapping in Phosphorus-Doped Silicon

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