Electrical determination of the bandgap energies of the emitter and base regions of bipolar junction transistors

Mimila-Arroyo, J.

doi:10.1063/1.4966609

Cited by 4 publications

(1 citation statement)

References 23 publications

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“…Clearly, there is a value for the unknown parameter T 0 for which the function M(V SC , T x , T 0 ) becomes a constant equal to J 0AU (T x ). This occurs when to the unknown T 0 parameter is given a value that results to be equal to T x , the searched junction temperature [24][25][26]. It is highlighted that the above procedure does not constitutes a fit but rather a rigorous mathematical procedure based on the model of Shockley for the transistor currents.…”

Section: Temperature and Charge Transport Parameters Extractionmentioning

confidence: 99%

On the importance of the junction temperature on obtaining the charge transport parameters of a solar cell

Mimila-Arroyo¹

2019

Semicond. Sci. Technol.

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The charge transport parameters (CTP) of a solar cell are extremely important as they provide the information required to do the fine tuning of its design and associated technology. This work demonstrates the necessity of knowing the junction temperature to extract them, other way their values might be wrong, misleading the device improvement efforts. Here the junction temperature and the CTP are extracted utilizing a dedicated structure similar to a bipolar junction transistor which allows to screen and separate the recombination current in the space charge region of the solar cell junction from that due to the injection-diffusion-recombination of minority carriers in its quasi-neutral regions. The additional pn junction is located beneath that of the solar cell, in such a way that the minority carriers injected into its base are able to reach the additional junction. Biasing the solar cell junction without biasing the additional one the neat separation of those currents is achieved. From the diffusion current reaching the additional junction the cell temperature is extracted as well as its diffusion saturation current. Then, with these two parameters the remaining ones are straightly obtained. Moreover, the current separation allows the cross verification of the extracted parameters. Additionally, the involved theory, model of Shockley, allows an estimation of the diffusion length and life time of the minority carriers in the solar cell base region. The method, applied to the n-GaInP/p-GaAs heterojunction solar cell shows that under the measurement conditions the true junction temperature was T 0 =296.343 K, the studied structure at this temperature has a diffusion saturation current of J 0D =3.9×10 −19 A cm −2 and a recombination current density of J 0R =1.9×10 −12 A cm −2 , diffusion length and life time of minority carriers in the base region of L n =0.46 μm and τ n =1.2×10 −10 s, respectively. These saturation current values compared with those obtained through the conventional mathematical fit are orders of magnitude different.

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Section: Temperature and Charge Transport Parameters Extractionmentioning

confidence: 99%

On the importance of the junction temperature on obtaining the charge transport parameters of a solar cell

Mimila-Arroyo¹

2019

Semicond. Sci. Technol.

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Semiconductor Heterojunctions ☆

Skromme

Sujan

2018

Reference Module in Materials Science and Materials Engineering

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The free electron gas primary thermometer using an ordinary bipolar junction transistor approaches ppm accuracy

Mimila-Arroyo

2017

Review of Scientific Instruments

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In this paper, it is demonstrated that the free electron gas primary thermometer based on a bipolar junction transistor is able to provide the temperature with an accuracy of a few parts per million. Its simple functioning principle exploits the behavior of the collector current when properly biased to extract the temperature. Using general purpose silicon transistors at the water triple point (273.16 K) and gallium melting point (302.9146), an accuracy of a few parts per million has been reached, constituting the simplest and the easiest to operate primary thermometer, that might be considered even for the redefinition of Kelvin.

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Electrical determination of the bandgap energies of the emitter and base regions of bipolar junction transistors

Cited by 4 publications

References 23 publications

On the importance of the junction temperature on obtaining the charge transport parameters of a solar cell

On the importance of the junction temperature on obtaining the charge transport parameters of a solar cell

Semiconductor Heterojunctions ☆

The free electron gas primary thermometer using an ordinary bipolar junction transistor approaches ppm accuracy

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