Electrical doping of HgCdTe by ion implantation and heat treatment

Destéfanis, G.

doi:10.1016/0022-0248(90)90798-p

Cited by 181 publications

(49 citation statements)

References 65 publications

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“…The dependence of the layer charge carrier concentration NS on the radiation dose  is shown in Figure 1. The figure shows that the concentration decrease is observed at higher doses of radiation, which is contrary to the argon implantation data [3]. This decline can be attributed to the greater disorder of the implanted layer by applying a high-energy and heavier (by 1.9 times in comparison with argon ions) arsenic ions.…”

Section: Resultscontrasting

confidence: 62%

Electrical characteristics of epitaxial MCT after As⁺ implantation

Войцеховский

Іжнін

Korotaev

et al. 2017

J. Phys.: Conf. Ser.

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Abstract. In this work we studied the characteristics of MBE MCT films after the introduction of different energies As+ with different doses of irradiation. Some of the samples were subjected to post-implantation annealing. Electrical characteristics of the samples were determined from Hall measurements. Voltage-current characteristics of the structures were also measured. Activation As and modification of the characteristics of MCT outside the implanted layer after annealing have been detected. Also we found differences in the p-n junction depths and electrically active defects profiles.

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Section: Resultscontrasting

confidence: 62%

Electrical characteristics of epitaxial MCT after As⁺ implantation

Войцеховский

Іжнін

Korotaev

et al. 2017

J. Phys.: Conf. Ser.

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“…For 25 years, the standard HgCdTe-based IR device technology in France has relied on an n + -n À -p boron-ionimplanted planar architecture. 1 In this technology, the control of the p-type electrical doping of the substrate is achieved using Hg vacancies. Because defects act systematically as donors, boron ion implantation leads to an n + -doped region.…”

Section: Introductionmentioning

confidence: 99%

Planar p-on-n HgCdTe FPAs by Arsenic Ion Implantation

Mollard

Destéfanis

Baier

et al. 2009

Journal of Elec Materi

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This paper reviews recent developments in the characterization of planar p-on-n photodiodes fabricated from long-and mid-wavelength Hg 1Àx Cd x Te at the Electronics and Information Technology Laboratory (LETI). The Hg 1Àx Cd x Te epitaxial layers were grown by both liquid-phase and molecularbeam epitaxy. Planar p-on-n photodiodes were fabricated by arsenic implantation into an indium-doped Hg 1Àx Cd x Te base layer. Electro-optical characterization on these p-on-n photodiodes showed low leakage currents (shunt resistance > 10 GX) and mean R 0 A values comparable to the state of the art, i.e., equal to 5000 X cm 2 at k c = 9.3 lm (k c : cutoff wavelength). Results of focalplane arrays operating in both the long-wavelength infrared (IR) and middlewavelength IR bands are reported, with noise equivalent delta temperature and responsivity values at k c = 9.3 lm in excess of 99.64%. These results demonstrate the viability and technological maturity of both material growth and device processing.

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“…It is known that ion implantation in p−type MCT leads to the formation of n + −n−p−structure [16]. The formation of n−layer in this case is related to the diffusion of the Hg i atoms released by implanted ions, and to the annihilation of these atoms with mercury vacancies, similar to the case of IM.…”

Section: The Methodsmentioning

confidence: 87%