Electrical Gating of the Charge-Density-Wave Phases in Two-Dimensional h-BN/1T-TaS₂ Devices

Abstract

We report on the electrical gating of the charge-density-wave phases and current in h-BN-capped three-terminal 1T-TaS2 heterostructure devices. It is demonstrated that the application of a gate bias can shift the source–drain current–voltage hysteresis associated with the transition between the nearly commensurate and incommensurate charge-density-wave phases. The evolution of the hysteresis and the presence of abrupt spikes in the current while sweeping the gate voltage suggest that the effect is electrical rather than self-heating. We attribute the gating to an electric-field effect on the commensurate charge-density-wave domains in the atomic planes near the gate dielectric. The transition between the nearly commensurate and incommensurate charge-density-wave phases can be induced by both the source–drain current and the electrostatic gate. Since the charge-density-wave phases are persistent in 1T-TaS2 at room temperature, one can envision memory applications of such devices when scaled down to the dimensions of individual commensurate domains and few-atomic plane thicknesses.

Quantum Composites with Charge‐Density‐Wave Fillers

“…The hysteresis observed by applying the forward and reverse electric bias clearly reveals the NC‐CDW to IC‐CDW phase transition, in line with prior reports. [ 12,16,18–21,33–36,39–44 ] These results confirm that the filler material we used for the preparation of quantum composites is of high quality, with a well‐defined and pronounced CDW phase transition.…”

“…The details of fabricating the Ohmic contacts to 1T-TaS 2 samples for the electrical measurements have been reported by some of us elsewhere. [14,40,41] In Figure 1d, we present the representative current-voltage (I-V) characteristics of a singlecrystal few-layer of 1T-TaS 2 measured at room temperature. The hysteresis observed by applying the forward and reverse electric bias clearly reveals the NC-CDW to IC-CDW phase transition, in line with prior reports.…”

Robust Behavior of Charge Density Wave Quantum Motif Star‐of‐David in 2D NbSe2 Nanocrystals

“…Due to the larger contribution from the topmost six Se atoms, the SODs are imaged as triangular protrusions, as labeled by the blue triangles in Figure 1a, and thereafter. Due to the trend for continuous minimization of CDW-based electronic devices, [21][22][23] it is intuitive to explore how would the CDW patterns behave on the nanoscale NbSe 2 islands, especially when island size is comparable to several CDW units.…”

Potassium hydroxide treatment of layered WSe2 with enhanced electronic performances

“…3 In recent years, the layer-dependent photoluminescence (PL) property of layered WSe 2 has been studied; particularly, as the thickness decreases to a monolayer, the transition from indirect to direct gap has been observed by PL measurements. 4 Up to now, various methods, including ionic-liquid gating 5 and hexagonal boron nitride capping, 6 have been investigated for improving both carrier mobility and PL efficiency of TMDCs. For instance, Yamamoto et al reported that exposure of WSe 2 to O 3 at 100 °C for a few hours formed the selective oxidation layer by providing protection from ambient effects, while this treatment resulted in a decrease in PL intensity and damage to the underlying layers of the materials.…”