Electrical Hysteresis Behavior of Low Temperature Polycrystalline Silicon Thin Film Transistors

Nam, Dae Hyun; Lee, Hong-Koo; Jung, Sungjune; Ahn, Tae‐Joon; Kim, Chang‐Yeon; Kim, Chang‐Dong; Chung, In Jae

doi:10.1149/1.2356334

Cited by 6 publications

(1 citation statement)

References 4 publications

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“…[12] Hysteresis phenomenon was suppressed with increase of the panel temperature up to 100 o C due to the faster trapping/detrapping rate in high temperature. [13] The hysteresis was reported to be 0.20V at 100 o C. Although there have been many trials to reduce the hysteresis by surface plasma treatment, annealing, thin active, and heating the panel, the minimum hysteresis was reported to be around 0.17V for 50nm-thick poly-Si channel TFTs. In this reports, we showed that LTPS TFT's hysteresis could be reduced below 0.1V by applying the combinational adjustment of defect reduction in poly-Si and surface potential (φs) increase in channel.…”

Section: Introductionmentioning

confidence: 99%

16‐1: The role of hydrogen and surface potential in the performance and stability of poly‐Si TFTs on plastic substrates

Lee

Kim

Choi

et al. 2019

Symp Digest of Tech Papers

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In this work, we report that H in poly-Si and surface potential in channel play a critical role in the performance and stability of LTPS TFTs. We increased H contents in poly-Si film from 0.059 to 0.061 atom% resulting in the decrease of the fast state trap density from 4.9~5.8 × 10 10 /cm 2 to 3.6~4.6 × 10 10 /cm 2 . Also, we increased surface potential by applying the appropriate back gate bias in TFTs, resulting in the more reduction of effective trap state density down to 1.7~2.0×10 10 /cm 2 . This resulted in the increase of the field effect mobility up to 115.4cm 2 /V·sec and decrease of hysteresis below 0.1V. We implemented these technologies into our flexible AMOLED panel.

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Section: Introductionmentioning

confidence: 99%

16‐1: The role of hydrogen and surface potential in the performance and stability of poly‐Si TFTs on plastic substrates

Lee

Kim

Choi

et al. 2019

Symp Digest of Tech Papers

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P‐6.10: LTPS‐TFT Process for OLED and some issues generated from the manufacturing

Yao

Ning

2018

Symp Digest of Tech Papers

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AMOLED (Active‐matrix organic light emitting diode) is a new display technology used in flat panel display which has wider color gamut, higher contrast ratio, lower consumption than LCD and can achieve flexible display. However, LTPS (Low Temperature Poly‐Silicon)‐TFT (Thin Film Transistor), is now a highlight of Active Matrix Driving. As a current source, in order to drive it, there needs more TFTs and higher driven current for OLED. Compared with the traditional a‐Si TFT, LTPS‐TFT possesses the high mobility (≈100 cm2/V · s) and low off current poly‐silicon's character which is known as being high resolution ratio, quick reacting, wide aperture ratio and high integration. In this paper, we will discuss the common process of LTPS which is made in a relatively low temperature condition. Then we will talk about some display issues caused by LTPS process, such as mura, hysteresis and light spot, e.t.

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AMOLEDs With a Pixel-Driving Architecture for Eliminating Crosstalk

Kohno

Kageyama

Miyamoto

et al. 2012

IEEE Trans. Electron Devices

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Electrical Hysteresis Behavior of Low Temperature Polycrystalline Silicon Thin Film Transistors

Cited by 6 publications

References 4 publications

16‐1: The role of hydrogen and surface potential in the performance and stability of poly‐Si TFTs on plastic substrates

16‐1: The role of hydrogen and surface potential in the performance and stability of poly‐Si TFTs on plastic substrates

P‐6.10: LTPS‐TFT Process for OLED and some issues generated from the manufacturing

AMOLEDs With a Pixel-Driving Architecture for Eliminating Crosstalk

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