Electrical Improvement of Fluorine-Passivated Metal–Organic Chemical Vapor Deposited TiO2 Film on (NH4)2Sx-treated GaAs

The characteristics of a liquid-phase-deposited SiO 2 film on InP were investigated. The mixture of H 2 SiF 6 and H 3 BO 3 aqueous precursors was used as the growth solution. SiO 2 on InP with (NH 4 ) 2 S treatment showed good electrical characteristics owing to the reduction of native oxides and sulfur passivation. The electrical characteristics were further improved with an ultrathin Si interface passivation layer (IPL) through reductions in Fermi-level pinning and interface state density. Moreover, during the SiO 2 deposition, the HF in the growth solution simultaneously and effectively removed native oxides from the Si-IPL and provided fluorine passivation on it. The Al/SiO 2 /Si-IPL/(NH 4 ) 2 S-treated InP MOS capacitor showed superior electrical properties. The leakage current density reached 6.9 ' 10 %9 and 1.6 ' 10 %7 A/cm 2 at +2 V. The interface state density reached 3.6 ' 10 11 cm %2 eV %1 with low frequency dispersion of 12.3%.

show abstract

“…This indicates that F can passivate the GaAs surface and reduce D it . 30) This study is similar to the previous study.…”

Section: Resultssupporting

confidence: 92%

Reduction in interface state density of SiO₂/Si-IPL/InP by fluorine and sulfur passivations

Yen

Lee

2014

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…The high resistivities are likely caused by fluorine impurities, which have been reported to passivate grain boundaries in TiO 2 based dielectric films thus decreasing leakage current. 55, 56 In an attempt to test the dielectric behaviour of TiO 2 films prepared from TiF 4 and H 2 O we prepared Al/TiO 2 /Pt test capacitors with 100 nm TiO 2 layers deposited at 300, 400 and 500 • C. Each of the as-deposited films was too leaky for electrical characterization. However, one might be able to improve the dielectric properties by adequate post-treatments or change of deposition parameters but such studies are beyond the scope of this work.…”

Section: Film Characterizationmentioning

confidence: 99%

Atomic layer deposition of photocatalytic TiO2 thin films from TiF4 and H2O

et al. 2008

View full text Add to dashboard Cite

Titanium dioxide (TiO2) thin films were grown by atomic layer deposition (ALD) at 300-500 degrees C using TiF4 and H2O as precursors. The films were characterized by FESEM, EDX, UV/Vis and XRD techniques. Two glass types, soda lime and borosilicate, were used as the substrate materials. It was found that the type of the glass substrate had a very strong influence on the growth and properties of the resulting films. At substrate temperatures of 400 and 500 degrees C, the growth rates on borosilicate were 0.8 and 1.0 A per cycle, respectively, and the films were mainly anatase. With the same deposition conditions on soda lime, rutile phase was formed and the growth rates were 1.1 and 1.5 A per cycle, respectively. Growth saturation was confirmed for both glass substrates at 400 degrees C by varying the pulse lengths of the precursors. Both anatase and rutile films prepared at 400-500 degrees C possessed photocatalytic activity in degrading stearic acid under UV and visible light, whereas the films prepared at 300 degrees C had virtually no activity. All the films, including those prepared at 300 degrees C, turned superhydrophilic under UV light.

show abstract

“…The dielectric constant of TiO 2 is high, for anatase phase the value is 40 and for rutile ε = 80, which broadens the utilization of TiO 2 in electronics [15]. However, the crystallization usually leads to severe leakage due to the grain boundaries [15,26]. For amorphous TiO 2 the ε values are closely related to the preparation methods and film thickness [27,28].…”

Section: Introductionmentioning

confidence: 99%

Modulation of the dielectric property of Ga₂O₃/TiO₂ nanolaminates and their improvement on the electroluminescence from devices based on Er-doped Al₂O₃ nanofilms

Yuan¹,

Ma²,

Li³

et al. 2022

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Metal-oxide-semiconductor light-emitting devices (MOSLEDs) based on the erbium doped Al2O3 nanofilms still suffer from insufficient and unstable electrical injection, and the dielectric protection layers play an important role in their performance. Here, Ga2O3/TiO2 (GTO) nanolaminate films are fabricated by atomic layer deposition, the dielectric constant and leakage current of which are gradually regulated by alternating the component ratios. The tolerance to electric field and electron injection for the Al2O3:Er MOSLEDs is significantly improved, leading to the enhanced electroluminescence performance. The optimal GTO nanolaminate with thickness ratio of 4:6 could withstand the maximum breakdown electric field reaching 4.17 MV cm−1 while maintaining a high electric field of 8.4 ± 0.1 MV cm−1 within the luminescent Al2O3:Er layer (under injection of 0.3 A cm−2), resulting in the optical power density up to 11.37 mW cm−2. Much higher excitation efficiencies are also achieved with external quantum efficiency of 19.35%, and the operation time of the prototype Al2O3:Er MOSLEDs is significantly enhanced by more than two orders of magnitude from 48 s (I= 0.2 μA) to 7308 s (I = 1 μA). The design principle of the dielectric nanolaminates has been deduced, considering the dielectric and conductive contribution of different oxides, which supplies a promising route to further explore the application of optoelectronic devices based on oxides.

show abstract

Electrical Improvement of Fluorine-Passivated Metal–Organic Chemical Vapor Deposited TiO₂ Film on (NH₄)₂S_x-treated GaAs

Cited by 4 publications

References 30 publications

Reduction in interface state density of SiO₂/Si-IPL/InP by fluorine and sulfur passivations

Reduction in interface state density of SiO₂/Si-IPL/InP by fluorine and sulfur passivations

Atomic layer deposition of photocatalytic TiO2 thin films from TiF4 and H2O

Modulation of the dielectric property of Ga₂O₃/TiO₂ nanolaminates and their improvement on the electroluminescence from devices based on Er-doped Al₂O₃ nanofilms

Contact Info

Product

Resources

About

Electrical Improvement of Fluorine-Passivated Metal–Organic Chemical Vapor Deposited TiO2 Film on (NH4)2Sx-treated GaAs

Cited by 4 publications

References 30 publications

Reduction in interface state density of SiO2/Si-IPL/InP by fluorine and sulfur passivations

Reduction in interface state density of SiO2/Si-IPL/InP by fluorine and sulfur passivations

Atomic layer deposition of photocatalytic TiO2 thin films from TiF4 and H2O

Modulation of the dielectric property of Ga2O3/TiO2 nanolaminates and their improvement on the electroluminescence from devices based on Er-doped Al2O3 nanofilms

Contact Info

Product

Resources

About

Electrical Improvement of Fluorine-Passivated Metal–Organic Chemical Vapor Deposited TiO₂ Film on (NH₄)₂S_x-treated GaAs

Reduction in interface state density of SiO₂/Si-IPL/InP by fluorine and sulfur passivations

Reduction in interface state density of SiO₂/Si-IPL/InP by fluorine and sulfur passivations

Modulation of the dielectric property of Ga₂O₃/TiO₂ nanolaminates and their improvement on the electroluminescence from devices based on Er-doped Al₂O₃ nanofilms