Electrical isolation of InGaP by proton and helium ion irradiation

Данилов, Ю.А.; Souza, J. P. de; Boudinov, H.; Bettini, Jefferson; Carvalho, M.M.G. de

doi:10.1063/1.1506200

Cited by 11 publications

(4 citation statements)

References 17 publications

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“…The displacement damage is considered to depend on the carrier concentration, the crystal orientation, and so forth. 33) However, E d has been considered to depend on not the crystal structure but an element. Moreover, the techniques of estimating the E d are not uniform.…”

Section: Resultsmentioning

confidence: 99%

Performance degradation of InGaP solar cells due to 70 keV electron irradiation

Okuno¹,

Okuda²,

Oka³

et al. 2017

Jpn. J. Appl. Phys.

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The performance of InGaP solar cells irradiated with electron beams at energies lower than the damage threshold is degraded. To investigate the irradiation effect, GaAs and InGaP solar cells are irradiated with 70 keV electron beams. Measurements of the electroluminescence and external quantum efficiency, in addition to the light current voltage measurement, are conducted. The results show that the performance of the InGaP solar cell, mainly open-circuit voltage, is degraded and affected by nonradiative recombination centers, while the performance of the GaAs solar cell is hardly degraded. The comparison of the experimental results with the prediction from the displacement damage dose model suggests that the non-ionizing energy loss of electrons is the main factor for evaluating the degradation of the InGaP cell caused by electron beams in a relatively low energy range.

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Section: Resultsmentioning

confidence: 99%

Performance degradation of InGaP solar cells due to 70 keV electron irradiation

Okuno¹,

Okuda²,

Oka³

et al. 2017

Jpn. J. Appl. Phys.

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“…Irradiation damage on GaAs has already been extensively studied, including the determination of the range of protons and helium ions [8], irradiation induced changes of index of refraction [9], carrier compensation [10], and annealing effects [11], to give some examples. However, for InGaP material we found only a few reports of irradiation experiments, mostly related to the electrical parameters of the devices [12,13] and few about defects in the material [14,15]. Although for InP and GaP compounds some works show differences between experimental results and simulations regarding the penetration of protons [16], experiments on ion ranges for InGaP have not been reported yet.…”

Section: Introductionmentioning

confidence: 83%

Investigation of proton damage in III-V semiconductors by optical spectroscopy

Yaccuzzi

Khachadorian

Suárez

et al. 2016

Journal of Applied Physics

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We studied the damage produced by 2 MeV proton radiation on epitaxially grown InGaP/GaAs structure by means of spatially-resolved Raman and photoluminescence (PL) spectroscopy. The irradiation was performed parallel to the sample surface in order to determine the proton penetration range in both compounds. An increase of the intensity of LO phonons and a decrease of the luminescence were observed. We associate these changes with the the creation of defects in the damage region, also responsible for the observed change of the carrier concentration in the GaAs layer, determined by the shift of the phonon-plasmon coupled mode frequency. From the spatially resolved profile of the PL and phonon intensities, we obtained the proton range in both materials and we compared them with SRIM simulations. The comparison between the experimentally obtained proton range and simulations shows a very good agreement for GaAs but a discrepancy of 20 % for InGaP. This discrepancy can be explained in terms of limitations of the model to simulate the electronic orbitals and bonding structure of the simulated compound. In order to overcome this limitation we propose an increase of 40 % in the electronic stopping power for InGaP.

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“…2, it is expected that resistivity will increase due to the decrease in grain size and the increase in the grain boundary scattering. The degradation of carrier mobility generally has a relatively small contribution to the total changes in resistivity [10][11][12]. Table 1 Variations of resistivity with high-dose proton irradiation.…”

Section: Proton Irradiation Effects On Electrical Propertiesmentioning

confidence: 98%