Electrical method to measure the transient thermal impedance of insulated gate bipolar transistor module

Lü, Gongxuan; Mei, Yunhui; Li, Xin; Wang, Lei; Chen, Gang

doi:10.1049/iet-pel.2014.0120

Cited by 23 publications

(6 citation statements)

References 23 publications

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“…The thermal resistance of the IGBT assembly using nanosilver paste was characterized by a self-developed thermal impedance measurement system [31]. The fracture surface and the cross-section of the joint were analyzed by scanning electron microscopy (SEM).…”

Section: Methodsmentioning

confidence: 99%

“…A die-shear tester (XTZTEC Condor 150) was used to measure the shear strength of the as-sintered specimens at a displacement rate of 4 × 10 −4 m/s. The thermal resistance of the IGBT assembly using nanosilver paste was characterized by a self-developed thermal impedance measurement system [ 31 ]. The fracture surface and the cross-section of the joint were analyzed by scanning electron microscopy (SEM).…”

Section: Methodsmentioning

confidence: 99%

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Characterizations of Rapid Sintered Nanosilver Joint for Attaching Power Chips

et al. 2016

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Sintering of nanosilver paste has been extensively studied as a lead-free die-attach solution for bonding semiconductor power chips, such as the power insulated gated bipolar transistor (IGBT). However, for the traditional method of bonding IGBT chips, an external pressure of a few MPa is reported necessary for the sintering time of ~1 h. In order to shorten the processing duration time, we developed a rapid way to sinter nanosilver paste for bonding IGBT chips in less than 5 min using pulsed current. In this way, we firstly dried as-printed paste at about 100 °C to get rid of many volatile solvents because they may result in defects or voids during the out-gassing from the paste. Then, the pre-dried paste was further heated by pulse current ranging from 1.2 kA to 2.4 kA for several seconds. The whole procedure was less than 3 min and did not require any gas protection. We could obtain robust sintered joint with shear strength of 30–35 MPa for bonding 1200-V, 25-A IGBT and superior thermal properties. Static and dynamic electrical performance of the as-bonded IGBT assemblies was also characterized to verify the feasibility of this rapid sintering method. The results indicate that the electrical performance is comparable or even partially better than that of commercial IGBT modules. The microstructure evolution of the rapid sintered joints was also studied by scanning electron microscopy (SEM). This work may benefit the wide usage of nanosilver paste for rapid bonding IGBT chips in the future.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Characterizations of Rapid Sintered Nanosilver Joint for Attaching Power Chips

et al. 2016

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“…According to the setup parameters of power cycling tests, the profiles are generated by using the test conditions. In the tests, the junction temperature is measured by the temperature sensitive parameter (TSP) method [34,35]. T j is estimated by measuring V ce at a small calibration current (100 mA).…”

Section: Simulation Resultsmentioning

confidence: 99%

Study on lifetime prediction considering fatigue accumulative effect for die‐attach solder layer in an IGBT module

Lai

Chen

et al. 2018

IEEJ Transactions Elec Engng

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An accurate lifetime model is needed in power electronic systems as a cost-effective means of improving reliability and performance assessment, which have long been highly desired to reduce the maintenance cost and to make the product more competitive in the market. Die-attach solder layer fatigue has been identified as one of the root causes of failure of power electronic modules. This paper presents "physics-of-failure lifetime model", which takes fatigue accumulative effect into consideration and can quantify the effect of long-term small-temperature cycling to device fatigue life cycle to estimate the lifetime of the power module. First, small T j power cycling tests were designed to obtain the effects of T j on aged and un-aged modules. They indicated that the traditional lifetime models were not accurate in predicting the lifetime of power modules. Therefore, a new time-domain crack propagation model based on the cumulative damage in the die-attach solder layer is proposed, which includes time-dependent material properties and temperature profiles. Moreover, power cycling experiments and simulations are conducted to demonstrate the method by comparing the number of cycles to failure.

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“…This study argues that the effect of the relatively small cycles comes in after the module is already aged. D is defined as the ratio of the increment of the thermal resistance and the maximum increase of thermal resistance at failure, as shown in (11).…”

Section: Non-linear Accumulation Lifetime Modelmentioning

confidence: 99%

“…In converter design, thermal modelling and rain‐flow counting are usually used to estimate the module lifetime [4–6]. Wire bonding fatigue is one of the important factors affecting the lifetime [7–11] due to shear stresses on the bonding interface made by ultrasonic welding. Solder fatigue is another main ageing mechanism in practice.…”

Section: Introductionmentioning

confidence: 99%

Study on the lifetime characteristics of power modules under power cycling conditions

Lai

Chen

et al. 2016

IET Power Electronics

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This study presents a study on non-linear accumulative modelling for power module lifetime estimation in nonaccelerated operation. The model focuses on solder fatigue based on monitoring the internal thermal resistance of the module. Initially, the relatively small junction temperature variation (ΔT j) cycles contribute little to the lifetime consumption, but with an initial damage the effect becomes noticeable. The original Coffin-Manson accumulation approach is extended for complex mission profiles. The proposed non-linear accumulation model has three aspects: a Coffin-Manson relationship is first established; the thermal resistance degradation is then used to quantify damage accumulation; the effects of the average junction temperature (T jmean) and ΔT j on the rate of degradation are finally included through the parameters of the non-linear accumulation model which also depends on the effect of the present condition of the module. Experiments demonstrate the phenomena and verify the proposed model.

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Electrical method to measure the transient thermal impedance of insulated gate bipolar transistor module

Cited by 23 publications

References 23 publications

Characterizations of Rapid Sintered Nanosilver Joint for Attaching Power Chips

Characterizations of Rapid Sintered Nanosilver Joint for Attaching Power Chips

Study on lifetime prediction considering fatigue accumulative effect for die‐attach solder layer in an IGBT module

Study on the lifetime characteristics of power modules under power cycling conditions

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