Electrical Optical and Structural Properties of p-type Silicon

Abstract

Electrical, optical and structural properties of p-type single crystal silicon were investigated in this work. Electrical conductivity of p-type silicon was measured in the temperature ranges 190 -300 K. The acceptor ionization energy ( E A ) was between 0.047 -0.051 eV. Photoconductivity of the material was investigated by varying sample current, light intensity and temperature at a constant chopping frequency of 45.60 Hz. Absorption co-efficient ( ) of the material was calculated from optical transmittance and reflectance measurements at room temperature (300 K) in the wavelength range of 300 -2500 nm. The direct optical band gap energy was found between 2.10 -2.20 eV and the indirect optical band gap energy was found between 0.95 -1.0 eV. The lattice parameter (a) was found to be 5.419Å from X-ray diffraction method (XRD).

Van der Waals heterojunction diode composed of WS2flake placed on p-type Si substrate

“…Si is a known intrinsic semiconductor, which can exhibit numerous optical and electrical properties when doped with an impurity (such as B, Al, P, and As). P-type Si has extensive uses in the field of photodetectors, transistors, lasers, light-emitting diodes, solar cells, and specialized integrated circuits [27].…”

Illumination-Dependent I-V Characteristics of MgF2/Al Multilayered Photodetector

“…The intensities indicate the crystallographic pattern of the MgF 2 thin film, with distinct peaks observed at 27.8°, 35.8°, and 43.5°, corresponding to the (1 1 0), (2 0 1), and (2 1 0) planes, respectively, 37 other distinct peaks are observed at 29.3°, and 38.4°c orresponding to the (100), ( 111), for Si and Al respectively. 38,39 A small peak was detected for Al at the plane (220) which reflects the crystalline nature of the Al layer, 40 another peak was observed at 58.7°confirming the presence of Cr, however the chromium seems to be oxides due to the reaction with residual oxygen inside the deposition chamber forming Cr 3 O 4 . 41 Atomic Force Microscopy (AFM) provides detailed information about the surface topography of a sample at the nanoscale.…”

Generation and routing of nanoscale droplet solitons without compensation of magnetic damping

“…The simulations reveal that the PMA gradient strongly affects the soliton trajectory in the Fe film owing to additional acceleration of the droplet in the direction antiparallel to the gradient vector. Figure 5 shows the trajectories of the soliton generated by the gate electrode with the radius R G = 70 nm and routed by the Si nanostripe with the length δ y = 200 nm, width δ x = 50 nm, and resistivity ρ = 83 mΩ m [33]. When voltages U/2 and −U/2 are applied to the nanostripe ends, the trajectory of the droplet center changes beneath the nanostripe, deviating from approximately straight path forming at U = 0.…”