Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers

Zhang, Ying; Xie, Haiting; Chen, Dong

doi:10.3390/mi10110779

Cited by 10 publications

(6 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This means that, in the electrical characteristics of the B5 device, the mobility was boosted to over 30 cm 2 V −1 s −1 and the negative V th shift of 1 V is associated with the onset of dual-channel formation, which is meaningful for the device properties. [23,33] In particular, the B10 device transitions the main channel from IGZO to IZO, where the current density of IZO greatly exceeds that of IGZO. As a result, in the electrical properties of B10 compared to B5, V th shifts negatively by only 0.1 V while the mobility is improved to about 40 cm 2 V −1 s −1 .…”

Section: Resultsmentioning

confidence: 99%

Remarkable Stability Improvement with a High‐Performance PEALD‐IZO/IGZO Top‐Gate Thin‐Film Transistor via Modulating Dual‐Channel Effects

Kim

Lee

et al. 2022

Adv Materials Inter

View full text Add to dashboard Cite

Plasma‐enhanced atomic layer deposition (PEALD)‐based bilayer IZO (back channel)/IGZO top‐gate thin‐film transistors (TFTs) with different IZO and IGZO layer thicknesses are fabricated to evaluate the correlation between thickness and electrical characteristics/reliability caused by dual‐channel modulation. The dual‐channel formed by IZO stacked on the backchannel improves both mobility and reliability of devices as the IZO layer thickness increases. In the TCAD simulation, as the thickness of IZO increases, the current flowing through the IZO channel among the dual channels increases and the main channel transition from IGZO to IZO occurs above a certain IZO layer thickness. The main channel transition to IZO, which has high mobility and is located in the backchannel away from the gate insulator (GI), leads to a mobility increase with a lower threshold voltage (Vth) shift and a remarkable improvement of reliability deteriorated by the GI. As a result, PEALD‐based IZO/IGZO TG TFTs exhibit both high mobility (≈40 cm2 V−1 s−1) and high stability (ΔVth = ‐0.07 V) of a positive bias temperature stress up to 10 800 s. This suggests that ALD‐based dual‐channel regulation by nanoscale thickness control of the stacking oxide semiconductor can overcome the trade‐off between mobility and reliability.

show abstract

Section: Resultsmentioning

confidence: 99%

Remarkable Stability Improvement with a High‐Performance PEALD‐IZO/IGZO Top‐Gate Thin‐Film Transistor via Modulating Dual‐Channel Effects

Kim

Lee

et al. 2022

Adv Materials Inter

View full text Add to dashboard Cite

show abstract

“…Since the first report on indium-gallium-zinc oxide thin-film transistors (TFTs) by Nomura et al in 2004, oxide semiconductor TFTs have drawn significant attention owing to their high electrical performance, low fabrication temperature, and superior large area uniformity [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 ]. To date, a variety of oxide semiconductors have been developed to enhance the electrical performance and stability of oxide TFTs [ 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 ].…”

Section: Introductionmentioning

confidence: 99%

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

et al. 2020

View full text Add to dashboard Cite

In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (μFE), a lower subthreshold swing (SS), a positively shifted threshold voltage (VTH), and an improved negative-gate-bias-stress (NGBS) stability, as compared to pristine TFTs. In contrast, Al-capped SnO TFTs exhibit a lower μFE, higher SS, negatively shifted VTH, and degraded NGBS stability, as compared to pristine TFTs. No significant difference was observed between the electrical performance of the Cr-capped SnO TFT and that of the pristine SnO TFT. The obtained results were primarily explained based on the change in the back-channel potential of the SnO TFT that was caused by the difference in work functions between the SnO and various metals. This study shows that capping layers with different metals can be practically employed to modulate the electrical characteristics of p-channel SnO TFTs.

show abstract

“…[1,3] The subgap states in a-IGZO also act as electron traps that impact device performance by introducing transfer curve hysteresis and bias illumination stressing. [4][5][6][7][8][9] Fabrication processes for AOS TFTs have a marked effect on the overall characteristics of the resulting devices, which is reflected in the composition of the subgap states.…”

mentioning

confidence: 99%

Illuminating Trap Density Trends in Amorphous Oxide Semiconductors with Ultrabroadband Photoconduction

Mattson

Vogt

Wager

et al. 2023

Adv Funct Materials

View full text Add to dashboard Cite

Under varying growth and device processing conditions, ultrabroadband photoconduction (UBPC) reveals strongly evolving trends in the defect density of states (DoS) for amorphous oxide semiconductor thin‐film transistors (TFTs). Spanning the wide bandgap of amorphous InGaZnOx (a‐IGZO), UBPC identifies seven oxygen deep donor vacancy peaks that are independently confirmed by energetically matching to photoluminescence emission peaks. The subgap DoS from 15 different types of a‐IGZO TFTs all yield similar DoS, except only back‐channel etch TFTs can have a deep acceptor peak seen at 2.2 eV below the conduction band mobility edge. This deep acceptor is likely a zinc vacancy, evidenced by trap density which becomes 5‐6× larger when TFT wet‐etch methods are employed. Certain DoS peaks are strongly enhanced for TFTs with active channel processing damage caused from plasma exposure. While Ar implantation and He plasma processing damage are similar, Ar plasma yields more disorder showing a ≈2 × larger valence‐band Urbach energy, and two orders of magnitude increase in the deep oxygen vacancy trap density. Changing the growth conditions of a‐IGZO also impacts the DoS, with zinc‐rich TFTs showing much poorer electrical performance compared to 1:1:1 molar ratio a‐IGZO TFTs owing to the former having a ∼10 × larger oxygen vacancy trap density. Finally, hydrogen is found to behave as a donor in amorphous indium tin gallium zinc oxide TFTs.

show abstract

Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers

Cited by 10 publications

References 20 publications

Remarkable Stability Improvement with a High‐Performance PEALD‐IZO/IGZO Top‐Gate Thin‐Film Transistor via Modulating Dual‐Channel Effects

Remarkable Stability Improvement with a High‐Performance PEALD‐IZO/IGZO Top‐Gate Thin‐Film Transistor via Modulating Dual‐Channel Effects

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

Illuminating Trap Density Trends in Amorphous Oxide Semiconductors with Ultrabroadband Photoconduction

Contact Info

Product

Resources

About