Electrical performance and radiation sensitivity of stacked PMOS dosimeters under bulkbias control

Abstract-The concept of an active integrated dosimetric sensor for the radiation monitoring of the Compact Muon Solenoid experiment at the CERN (European Center for Nuclear Research) LargeHadron Collider is presented. The sensor, based on RadFET, OSL, p-i-n diode, and pad detector dosimeters, will measure both ionizing and nonionizing energy losses in the harsh radiation environment produced by hadron interactions.

“…Moreover, the sensitivity decreases with increasing dose. Therefore, these devices are used when regular measurements of doses absorbed over long periods of time are required [10], [11].…”

Section: T He Radiation Environment Encountered In the Largementioning

confidence: 99%

Conception of an integrated sensor for the radiation monitoring of the CMS experiment at the large hadron collider

Ravotti

Gläser

Moll

et al. 2004

“…, the peak value of the signal is given by (3) and it is directly proportional to the dose as long as the stimulation flux remains constant. Let us consider now the integrated OSL signal.…”

Section: A Influence Of the Stimulation Flux On The Osl Signalmentioning

confidence: 99%

“…Acting as a fully passive detector with no power consumption during the irradiation, the OSL sensor is completely reset after a four-second reading process. Complementary to RADFET's [3], [4] that measure the dose integrated over the duration of the mission, the OSL makes it possible to evaluate the dose deposited orbit by orbit. A major application of the OSL sensor is the evaluation of the dose received by spacecrafts flying on low earth orbits (LEO).…”

Section: Introductionmentioning

confidence: 99%

Hardening of a radiation sensor based on optically stimulated luminescence

Vaillé

Ducret

Idri

et al. 2003

“…The RADFETs disadvantages are in need for calibration in different radiation fields [8], [9]. RADFETs have been proposed in different applications to measure doses of miligray in personal dosimetry [10], [11], from centigrays to some grays in medical applications [12]- [18] and up to thousands of grays in space applications [8], [19]- [21]. Due to their switching speed, simplified input drive requirements, low noise and negligible thermal instabilities, power Vertical Double-Diffused MOSFETs (VDMOSFETs) are a good choice for applications involving radiation environments [22].…”

Section: Introductionmentioning

confidence: 99%

Application of p-Channel Power VDMOSFET as a High Radiation Doses Sensor

Pejović

2015

This paper presents a comparative study of RAD-FETs and commercial p-channel power VDMOSFETs sensitivity to gamma-ray irradiation. Sensitivity was characterized by the threshold voltage shift determined from extrapolated linear region of transfer characteristics in saturation as a function of radiation dose. Sensitivity was followed in the dose range from 100 Gy to 500 Gy without and with V gate bias. Linear dependence between threshold voltage shift and radiation dose was established for components for which the gate bias during irradiation was V. Sensitivity of p-channel power VDMOS-FETs is larger than the RADFETs, and it is a consequence of a larger concentration of fixed traps generated by gamma-ray irradiation. The mechanisms responsible for the threshold voltage shift during irradiation have been discussed as well. The fading of these components was also monitored at room temperature up to 24 hours and it was shown that it is larger in p-channel power VDMOSFETs then in RADFETs.