Electrical Performance and Scalability of Pt Dispersed SiO<sub>2</sub>Nanometallic Resistance Switch

Choi, Byung Joon; Torrezan, Antonio C.; Norris, Kate J.; Miao, Feng; Strachan, John Paul; Zhang, Min-Xian; Ohlberg, Douglas A. A.; Kobayashi, Nobuhiko P.; Yang, J. Joshua; Williams, R. Stanley

doi:10.1021/nl401283q

Cited by 188 publications

(128 citation statements)

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“…However, Flash memories continue to suffer from low endurance, low write speed and high voltage in write process [1,2]. Under the circumstances, the resistive switching memory which based on resistance change modulated by electrical stimulus, has inspired both scientific and commercial interest due to its excellent area compaction (4F 2 , where F is minimal feature size), high switching speed (<100 ps) [3], high endurance (>10 12 cycles) [4], good retention (>10 years@85°) [5][6][7][8] and low power consumption (~1 µW) [9]. Numerous theoretical models and experiments have been proposed to explain the resistive switching behavior in various materials ranging from rare-earth oxides (e.g., YCrO3 [10] and LaLuO3 [11]), phase-change chalcogenides (e.g., Ge2Sb2Te5), solid-state electrolytes (e.g., Au/Cu in GeSe) to transition metal oxide (e.g., TiO2 and SrTiO3) [12].…”

Section: Introductionmentioning

confidence: 99%

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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Abstract:Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.

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Section: Introductionmentioning

confidence: 99%

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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“…[15][16][17] Switching below 100 ps was shown for a Pt/SiO 2 -based device 18 and the record switching speed of <85 ps was achieved for a nitride-based resistive switch. 19 In all of these studies, however, it was concluded that the switching speed was still limited by the measurement setup.…”

Section: Introductionmentioning

confidence: 99%

“…Based on eqn (18) and (19), design rules for developing ultrafast ReRAMs can be deduced already. To evaluate the voltage-time dilemma, the gure of merit NL is introduced, according to…”

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The ultimate switching speed limit of redox-based resistive switching devices

et al. 2019

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In contrast to classical charge-based memories, the binary information in redox-based resistive switching devices is decoded by a change of the atomic configuration rather than changing the amount of stored electrons. This offers in principle a higher scaling potential as ions are not prone to tunneling and the information is not lost by tunneling.The switching speed, however, is potentially smaller since the ionic mass is much higher than the electron mass. In this work, the ultimate switching speed limit of redoxbased resistive switching devices is discussed. Based on a theoretical analysis of the underlying physical processes, it is derived that the switching speed is limited by the phonon frequency. This limit is identical when considering the acceleration of the underlying processes by local Joule heating or by high electric fields. Electro-thermal simulations show that a small filamentary volume can be heated up in picoseconds.Likewise, the characteristic charging time of a nanocrossbar device can be even below ps. In principle, temperature and voltage can be brought fast enough to the device to reach the ultimate switching limit. In addition, the experimental route and the challenges towards reaching the ultimate switching speed limit are discussed. So far, the experimental switching speed is limited by the measurement setup.

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“…RRAM have been demonstrated to exhibit excellent miniaturization potential down to less than 10 nm [1], sub-ns operation speed [2,3], energy consumption (<0.1 pJ) [4,5], and high endurance (>10 12 switching cycle) [6]. Resistance switching (RS) behavior has been reported in many oxide material-based metal/oxide/metal (MOM) structures.…”

Section: Introductionmentioning

confidence: 99%

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films

Mustaqima¹,

Yoo²,

Huang³

et al. 2016

Nano Online

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We report the preparation of (111) preferentially oriented CoFe 2 O 4 thin films on Pt(111)/TiO 2 /SiO 2 /Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

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Electrical Performance and Scalability of Pt Dispersed SiO₂Nanometallic Resistance Switch

Cited by 188 publications

References 50 publications

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

The ultimate switching speed limit of redox-based resistive switching devices

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films

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Electrical Performance and Scalability of Pt Dispersed SiO2Nanometallic Resistance Switch

Cited by 188 publications

References 50 publications

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

The ultimate switching speed limit of redox-based resistive switching devices

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films

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Product

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Electrical Performance and Scalability of Pt Dispersed SiO₂Nanometallic Resistance Switch