Electrical performance of gallium nitride nanocolumns

Niebelschütz, M.; Cimalla, V.; Ambacher, O.; Machleidt, T.; Ristić, Jelena; Calleja, E.

doi:10.1016/j.physe.2006.10.007

Cited by 25 publications

(15 citation statements)

References 20 publications

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“… (online colour at: http://www.pss-b.com/) Nanowires for AFM‐based analysis: (a) MBE grown GaN nanowires on Si 66–69, (b) SiC nanowires fabricated by self‐masking during dry etching 65, (c) LPCVD grown Si nanowire 53 on a carbon grid, clamped by FIB and (d) carbon nanotube on a nanogrid 70, 71 without clamping. …”

Section: Characterization Methodsmentioning

confidence: 99%

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Characterization of Irreversible Kinase Inhibitors by Directly Detecting Covalent Bond Formation: A Tool for Dissecting Kinase Drug Resistance

et al. 2010

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Targeting protein kinases in cancer therapy with irreversible small-molecule inhibitors is moving to the forefront of kinase-inhibitor research and is thought to be an effective means of overcoming mutation-associated drug resistance in epidermal growth factor receptor kinase (EGFR). We generated a detection technique that allows direct measurements of covalent bond formation without relying on kinase activity, thereby allowing the straightforward investigation of the influence of steric clashes on covalent inhibitors in different resistant kinase mutants. The obtained results are discussed together with structural biology and biochemical studies of catalytic activity in both wild-type and gatekeeper mutated kinase variants to draw conclusions about the impact of steric hindrance and increased catalytic activity in drug-resistant kinase variants.

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Section: Characterization Methodsmentioning

confidence: 99%

“…As a consequence, InN nanowire have shown increasing conductivity with decreasing diameter (Fig. 22a) 67–69, a behavior that is opposite to most semiconducting nanowires such as GaN 66–68. The surface accumulation of electrons in InN can be reduced by exposure to ozone 96, 97.…”

Section: Young's Modulus In Nanowiresmentioning

confidence: 98%

Characterization of Irreversible Kinase Inhibitors by Directly Detecting Covalent Bond Formation: A Tool for Dissecting Kinase Drug Resistance

et al. 2010

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“…Only a few studies have been reported about the diameter-dependent conductive properties of nanowires, even not restricted to CAFM, and a considerable part of them dealt with the diameter dependence of nanowires' resistivity [25,[40][41][42]. For example, a couple of researches on GaN nanowires found that the resistivity was high at a critical diameter (20~80 nm, dependent on fabrication methods) and kept unchanged beyond it [41,43], whereas other researches on Si nanowires reported that the nanowire resistivity decreased with increased diameter in the range of tens to hundreds of nanometers [40,44]. For semiconductor nanowires with metal contacts, Schottky barrier may play an important role in their conductive properties.…”

Section: Introductionmentioning

confidence: 99%

Investigating Size-Dependent Conductive Properties on Individual Si Nanowires

Wang

et al. 2020

Nanoscale Res Lett

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Periodically ordered arrays of vertically aligned Si nanowires (Si NWs) are successfully fabricated by nanosphere lithography combined with metal-assisted chemical etching. By adjusting the etching time, both the nanowires' diameter and length can be well controlled. The conductive properties of such Si NWs and particularly their size dependence are investigated by conductive atomic force microscopy (CAFM) on individual nanowires. The results indicate that the conductance of Si NWs is greatly relevant to their diameter and length. Si NWs with smaller diameters and shorter lengths exhibit better conductive properties. Together with the I-V curve characterization, a possible mechanism is supposed with the viewpoint of size-dependent Schottky barrier height, which is further verified by the electrostatic force microscopy (EFM) measurements. This study also suggests that CAFM can act as an effective means to explore the size (or other parameters) dependence of conductive properties on individual nanostructures, which should be essential for both fabrication optimization and potential applications of nanostructures.

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“…8 For any application with controllable or predictable device performance, the fundamental transport property, especially the size effect, in the GaN NW is an important issue. 9, 10 Calarco et al 11 have demonstrated the size-dependent study on photoconductivity ͑PC͒ of GaN NWs. Electron-hole spatial separation induced by surface band bending is proposed to dominate the photocurrent.…”

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confidence: 99%

Size-dependent photoconductivity and dark conductivity of m-axial GaN nanowires with small critical diameter

Chen

Chang

et al. 2009

Applied Physics Letters

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The size effects on both the photoconductivity and dark conductivity have been observed in m-axial GaN nanowires grown by chemical vapor deposition (CVD). For these nanowires with diameters at 50–130 nm, the products of carrier lifetime (τ) and mobility (μ) derived from the photocurrent measurements are typically at (2–8)×10−1 cm2/V, which are over two orders of magnitude higher than the maximal reported values [τμ=(1–5)×10−4 cm2/V] for their thin film counterparts. A significant decrease of τμ value at diameter below the critical values (dcrt) at 30–40 nm is observed. Similar size dependence is also found from the dark conductivity study. The temperature-dependent measurements further indicate two different thermal activation mechanisms in GaN nanowires with sizes above and below the dcrt. These results suggest a surface-dominant transport property in GaN nanowires both in dark and under light illumination due to the presence of surface depletion and band bending. Probable reasons leading to the smaller dcrt of the CVD-grown m-axial GaN nanowires, compared to the c-axial ones grown by molecular beam epitaxy are discussed as well.

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Electrical performance of gallium nitride nanocolumns

Cited by 25 publications

References 20 publications

Characterization of Irreversible Kinase Inhibitors by Directly Detecting Covalent Bond Formation: A Tool for Dissecting Kinase Drug Resistance

Characterization of Irreversible Kinase Inhibitors by Directly Detecting Covalent Bond Formation: A Tool for Dissecting Kinase Drug Resistance

Investigating Size-Dependent Conductive Properties on Individual Si Nanowires

Size-dependent photoconductivity and dark conductivity of m-axial GaN nanowires with small critical diameter

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