Electrical performance of laser damaged silicon photodiodes

Watkins, Steve Eugene; Zhang, Chen-Zhi; Walser, R. M.; Becker, Michael F.

doi:10.1364/ao.29.000827

“…This is in contrast to single shot damage thresholds where surface damage always preceded electrical damage. Morphological damage preceding electrical damage has been observed before [2]; however, for CCDs electrical performance can degrade prior to the onset of surface damage [3]. For multi-shot investigation the experimental setup is configured to produce one shot every second up to 20 shots.…”

Section: Resultsmentioning

confidence: 99%

Precision laser annealing of silicon devices for enhanced electro-optic performance

Bender

¹

,

DeRose

²

,

Starbuck

³

et al. 2014

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We present results from laser annealing experiments in Si using a passively Q-switched Nd:YAG microlaser. Exposure with laser at fluence values above the damage threshold of commercially available photodiodes results in electrical damage (as measured by an increase in photodiode dark current). We show that increasing the laser fluence to values in excess of the damage threshold can result in annealing of a damage site and a reduction in detector dark current by as much as 100x in some cases. A still further increase in fluence results in irreparable damage. Thus we demonstrate the presence of a laser annealing window over which performance of damaged detectors can be at least partially reconstituted. Moreover dark current reduction is observed over the entire operating range of the diode indicating that device performance has been improved for all values of reverse bias voltage. Additionally, we will present results of laser annealing in Si waveguides. By exposing a small (<10 um) length of a Si waveguide to an annealing laser pulse, the longitudinal phase of light acquired in propagating through the waveguide can be modified with high precision, <15 milliradian per laser pulse. Phase tuning by 180 degrees is exhibited with multiple exposures to one arm of a Mach-Zehnder interferometer at fluence values below the morphological damage threshold of an etched Si waveguide. No reduction in optical transmission at 1550 nm was found after 220 annealing laser shots.

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“…The equation used for the absorption coefficient in the simulations is [5] In addition to absorption due to electronic transitions, free carrier absorption can become significant at large carrier densities (which can be due to high doping levels or high optical intensities). The temperature dependence of the free-carrier absorption crosssection is given by [2] The resulting imaginary part of the index of refraction for silicon, , is given by where U is the net carrier density due to optical generation and doping. Other treatments of laser heating [6] have explicitly included two-photon and intervalence band absorption in addition to one-photon and free-carrier absorption described above.…”

Section: Optical Simulationmentioning

confidence: 99%

Precision Laser Annealing of Focal Plane Arrays

Bender

¹

,

DeRose

²

,

Starbuck

³

et al. 2015

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We present results from laser annealing experiments in Si using a passively Q-switched Nd:YAG microlaser. Exposure with laser at fluence values above the damage threshold of commercially available photodiodes results in electrical damage (as measured by an increase in photodiode dark current). We show that increasing the laser fluence to values in excess of the damage threshold can result in annealing of a damage site and a reduction in detector dark current by as much as 100x in some cases. A still further increase in fluence results in irreparable damage. Thus we demonstrate the presence of a laser annealing window over which performance of damaged detectors can be at least partially reconstituted. Moreover dark current reduction is observed over the entire operating range of the diode indicating that device performance has been improved for all values of reverse bias voltage. Additionally, we will present results of laser annealing in Si waveguides. By exposing a small (<10 um) length of a Si waveguide to an annealing laser pulse, the longitudinal phase of light acquired in propagating through the waveguide can be modified with high precision, <15 milliradian per laser pulse. Phase tuning by 180 degrees is exhibited with multiple exposures to one arm of a Mach-Zehnder interferometer at fluence values below the morphological damage threshold of an etched Si waveguide. No reduction in optical transmission at 1550 nm was found after 220 annealing laser shots. Modeling results for laser annealing in Si are also presented.

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“…A photodetector is used as a position detector in laser irradiations. However, it is susceptible to damage because it absorbs the energy of the laser and can be damaged [1,2]. The fact that photodetectors are damaged by lasers is considered by the international scientific community as a significant technological problem [3].…”

Section: Introductionmentioning

confidence: 99%

Study on the correlation of output current in each quadrant for a silicon-based quadrant detector in the bias voltage irradiated by laser

Liu

¹

,

Jin²,

Wang³

2022

Sixth International Symposium on Laser Interaction With Matter

0

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Silicon-based photodetector have become an important part in various laser applications. The influence in the process of laser interacted with a silicon-based quadrant detector include not only laser parameters, but also external circuit parameters. Using 1064nm millisecond pulsed laser to interact on one quadrant of a silicon-based quadrant detector, the output current of each quadrant of the silicon-based quadrant detector under different bias voltage is compared and studied. The research shows that, in the process of laser irradiation on a silicon-based quadrant detector, the change of output current in the quadrant where the laser beam is located can be divided into three stages: initial stage, maintenance stage and recovery stage. The output current in the maintenance stage decreases as time, and the output current in the recovery stage fluctuates. Combined with the change trend of output current in each quadrant, it is found that the phenomenon is related to the interaction between the quadrants. It is also found that the law between the output current and the bias voltage changes obviously in the maintenance stage and recovery stage with the increase of the bias voltage. The reason is that, the internal electric field increases with the bias voltage, and the influence on the output current increases.

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Electrical performance of laser damaged silicon photodiodes

Cited by 31 publications

References 10 publications

Precision laser annealing of silicon devices for enhanced electro-optic performance

Precision laser annealing of silicon devices for enhanced electro-optic performance

Precision Laser Annealing of Focal Plane Arrays

Study on the correlation of output current in each quadrant for a silicon-based quadrant detector in the bias voltage irradiated by laser

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