Electrical power dissipation in semiconducting carbon nanotubes on single crystal quartz and amorphous SiO2

Tsai, Cheng Lin; Liao, Albert; Pop, Eric; Shim, Moonsub

doi:10.1063/1.3622769

Cited by 19 publications

(20 citation statements)

References 30 publications

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“…27,35 The temperature profile is shown to be dependent on the length as well as on the type of NTs. 26,29,36,37 The temperature is maximum at the middle of short metallic NTs and therefore, the breakdown is expected at the midpoint as shown in Fig. 6(a).…”

Section: Fig 4 (A) I-t and (B) T-t Curves At 18 V (C) I-t And (D)mentioning

confidence: 99%

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Electrical characteristics of multiwalled carbon nanotube arrays and influence of pressure

Singh

2012

AIP Advances

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We have investigated the current-voltage characteristics of carbon nanotube arrays and shown that the current through the arrays increases rapidly with applied voltage before the breakdown occurs. Simultaneous measurements of current and temperature at one end of the arrays suggest that the rapid increase of current is due to Joule heating. The current through the array and the threshold voltage are found to increase with decreasing pressure

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Section: Fig 4 (A) I-t and (B) T-t Curves At 18 V (C) I-t And (D)mentioning

confidence: 99%

“…6(b) and the breakdown is highly probable in this maximum temperature region. 36,37 However, the maximum temperature region shifts toward the middle as the tube diameter increases and the breakdown was expected accordingly [ Fig. 6(b)].…”

Section: Fig 4 (A) I-t and (B) T-t Curves At 18 V (C) I-t And (D)mentioning

confidence: 99%

Electrical characteristics of multiwalled carbon nanotube arrays and influence of pressure

Singh

2012

AIP Advances

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“…Besides, their surfaces are usually cooled only through natural convection which can make selfheating critical especially for CN-TFTs operating in highfrequency range (~]VIHz) [8,9]. Although CNTs have high thermal conductivity [10,11], the interfacial thermal conductance at CNT-substrate interfaces [12][13][14][15][16][17][18][19] and CNT-CNT junctions [20][21][22][23][24] are very low which can exacerbate the self-heating effects and can significantly degrade the TFT performance.…”

Section: Introductionmentioning

confidence: 99%

Heat Dissipation Mechanism at Carbon Nanotube Junctions on Silicon Oxide Substrate

Chen

Kumar

2014

Journal of Heat Transfer

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This study investigates heat dissipation at carbon nanotube (CNT) junctions supported on silicon dioxide substrate using molecular dynamics simulations. The temperature rise in a CNT (~top CNT) not making direct contact with the oxide substrate but only supported by other CNTs (^bottom CNT) is observed to be hundreds of degree higher compared with the CNTs well-contacted with the substrate at similar power densities. The analysis of spectral temperature decay of CNT-oxide system shows very fast intratube energy transfer in a CNT from high-frequency band to intermediate-frequency bands. The low frequency phonon band (0-5 THz) of top CNT shows two-stage energy relaxation which results from the efficient coupling of low frequency phonons in the CNT-oxide system and the blocking of direct transport of high-and intermediate-frequency phonons of top CNT to the oxide substrate by bottom CNT.

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“…3,10 Recently, it has been shown that the temperature profile of short semiconducting NT is anisotropic and the breakdown can occur away from the middle. 11,12 However, there is no evidence on the exact position of the breakdown. For technological applications, it is desirable to understand the breakdown position and its predictability.…”

Section: Introductionmentioning

confidence: 99%

Electrical breakdown of carbon nanotube devices and the predictability of breakdown position

Goswami

2012

AIP Advances

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We have investigated electrical transport properties of long (>10 μm) multiwalled carbon nanotubes (NTs) by dividing individuals into several segments of identical length. Each segment has different resistance because of the random distribution of defect density in an NT and is corroborated by Raman studies. Higher is the resistance, lower is the current required to break the segments indicating that breakdown occurs at the highly resistive segment/site and not necessarily at the middle. This is consistent with the one-dimensional thermal transport model. We have demonstrated the healing of defects by annealing at moderate temperatures or by current annealing. To strengthen our mechanism, we have carried out electrical breakdown of nitrogen doped NTs (NNTs) with diameter variation from one end to the other. It reveals that the electrical breakdown occurs selectively at the narrower diameter region. Overall, we believe that our results will help to predict the breakdown position of both semiconducting and metallic NTs

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Electrical power dissipation in semiconducting carbon nanotubes on single crystal quartz and amorphous SiO2

Cited by 19 publications

References 30 publications

Electrical characteristics of multiwalled carbon nanotube arrays and influence of pressure

Electrical characteristics of multiwalled carbon nanotube arrays and influence of pressure

Heat Dissipation Mechanism at Carbon Nanotube Junctions on Silicon Oxide Substrate

Electrical breakdown of carbon nanotube devices and the predictability of breakdown position

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