Electrical properties and conduction mechanisms of heavily iron implanted silicon diodes

Bodunrin, J.O.; Moloi, S.J.

doi:10.1016/j.ssc.2021.114575

Cited by 4 publications

(5 citation statements)

References 39 publications

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“…-I, H(I)-I, and Ri -V plots are different. The difference in 𝑅 s has been reported before and was explained in terms of an increase in the current rate due to space charge injection in an electric insulating layer at high voltage region [30,31]. The difference in 𝑅 s values in Table 1, therefore, shows that an insulating layer is formed at metal-semiconductor interface.…”

Section: Current-voltage (I-v) Measurementssupporting

confidence: 48%

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Effects of zinc doping on current-voltage and capacitance-voltage-frequency characteristics of n-silicon Schottky diode

Oeba

Bodunrin

Moloi

2022

Preprint

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The electrical properties of diodes fabricated on undoped and zinc-doped n-silicon were investigated in this study using current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) techniques. The diode’s forward current decreased by a factor of ~ 3, while the reverse current increased by a factor of ~ 37, confirming that the charge carrier recombination/ compensation is due to the generation of minority carrier to increase the resistivity of the material upon doping with zinc (Zn). The generation of the minority carrier was confirmed by inversion of the material conductivity form n- to p-type, as shown by C-V results. Furthermore, the findings reveal that Zn is responsible for a reduction in full depletion voltage (FDV), implying that the space charge region (SCR) width can be fully depleted with a relatively low applied voltage. For the manufacturing of sensitive radiation detectors, a low FDV is critical. A change in the electrical properties of the diode was explained in terms of defects induced in the Si bulk by Zn. The properties of Zn-doped n-Si-based diodes are similar to those of radiation-hard Si devices. In general, the findings suggest that Zn might be employed as a possible dopant in a study to improve the characteristics of Si to fabricate radiation-hard and sensitive detectors for current and future high energy physics experiments.

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Section: Current-voltage (I-v) Measurementssupporting

confidence: 48%

“…V. The linear characteristic indicates a uniform doping density in the SCR [31,[39][40][41]. The slope of the linear region was used to determine the doping density of the diode.…”

Section: Capacitance -Voltage (C-v) Measurementsmentioning

confidence: 99%

Effects of zinc doping on current-voltage and capacitance-voltage-frequency characteristics of n-silicon Schottky diode

Oeba

Bodunrin

Moloi

2022

Preprint

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“…The

established from Cheungs and R i - V plots showed discrepancies, which have been reported previously and attributed to an increase in the current generation rate at regions with high voltage [ 30 , 31 ]. This discrepancy suggests the presence of an insulating layer at the m-s interface.…”

Section: Resultsmentioning

confidence: 70%

“…We presented the distinction between linear regions in the C −2 – V plots for undoped and doped diodes to examine the doping uniformity in the SCR. The C −2 – V plot for undoped diode exhibited a linear region at voltages above approximately 0.25 V. In comparison, the plot for a doped diode had a linear region at voltages above about 1.4 V. A wide linear characteristic in the C −2 – V plot of an undoped diode indicates that the doping density is uniform in the SCR [ 31 ]. The results obtained further provide insight into the quality of diode fabrication.…”

Section: Resultsmentioning

confidence: 99%

The electrical characteristics and conduction mechanisms of Zn doped silicon-based Schottky barrier diode

Oeba,

Bodunrin,

Moloi

2023

Heliyon

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“…The drastic decrease of R j trend after Fe-implantation is due to the high density of charge carriers generated by the Fe-induced defects. The R s evaluated using different methods differs because of the increase in the current rate as a result of the space charge injection in an electric insulating layer at the region where the voltage is high [40,41]. The discrepancy in R s values given in Table 1, therefore, suggests that there is an insulating layer formed at the m-s interface.…”

Section: Resultsmentioning

confidence: 99%

Exploring the Impact of Fe-Implantation on the Electrical Characteristics of Al/p-Si Schottky Barrier Diodes

Bodunrin

Oeba

Moloi

2023

Electronic Materials

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The effects of Fe-implantation on the electrical characteristics of Au/p-Si Schottky barrier diodes (SBDs) were studied using current–voltage (I–V) and capacitance–voltage (C–V) techniques. The Rutherford Backscattering Spectrometry (RBS) and Energy Dispersive Spectroscopy (EDS) results showed that Fe ions are well implanted and present in the Fe-implanted Si material. The acquired results from I–V and C–V analysis showed that the diodes were well fabricated, and Fe-implantation changed the normal diode’s I–V behaviour from typical exponential to ohmic. The ohmic behaviour was described in terms of the defect levels induced by Fe in the middle of the band gap of Si. The conduction mechanism for both forward and reverse currents was presented, and the effect of Fe-implantation on the conduction mechanisms was investigated. The C–V results show that Fe generates a high density of minority carriers in p-Si, which agreed with the increase in reverse current observed in the I–V results. The diode parameters in terms of saturation current, ideality factor, Schottky barrier height, doping density, and space charge region (SCR) width were used to investigate the effect of Fe in p-Si based diode. Owing to the observed changes, which were analogous to those induced by dopants that improve the radiation hardness of silicon, it was safe to say that Fe can also assist in the quest to improve the radiation hardness of silicon using the defect-engineering method.

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Electrical properties and conduction mechanisms of heavily iron implanted silicon diodes

Cited by 4 publications

References 39 publications

Effects of zinc doping on current-voltage and capacitance-voltage-frequency characteristics of n-silicon Schottky diode

Effects of zinc doping on current-voltage and capacitance-voltage-frequency characteristics of n-silicon Schottky diode

The electrical characteristics and conduction mechanisms of Zn doped silicon-based Schottky barrier diode

Exploring the Impact of Fe-Implantation on the Electrical Characteristics of Al/p-Si Schottky Barrier Diodes

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