Electrical properties and high-temperature dielectric relaxation behaviors of NaxBi(2−x)/3Cu3Ti4O12 ceramics

Yang, Longhai; Chao, Xiaolian; Liang, Pengfei; Wei, Lingling; Yang, Zupei

doi:10.1016/j.materresbull.2014.12.060

Cited by 22 publications

(7 citation statements)

References 26 publications

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“…4, the activation energy values for relaxation B1 and B2 are found to be 0.643 and 0.093 eV, respectively. The activation energy value for relaxation B1 is in accordance with the reported values of 0.512 eV for the Maxwell-Wagner relaxation associated with grain boundaries in Na 0.50 Bi 0.50 Cu 3 Ti 4 O 12 ceramics [10]. The similar results were also reported in the literature [15,16].…”

Section: Electric Modulus Analysissupporting

confidence: 91%

“…The result indicates that the element mole ratio of the grain surface is Na:Bi:Cu:Ti = 0.65:0.42:3.18:4.16, which is nearly stoichiometric for Na 0.65 Bi 0.45 Cu 3 Ti 4 O 12 ceramics. It is obvious that the dielectric spectra acquired here differs largely from one obtained previously in Na 0.50 Bi 0.50 Cu 3 Ti 4 O 12 ceramics at room temperature [10]. Compared to Na 0.50 Bi 0.50 Cu 3 Ti 4 O 12 , the frequency-stability range of Na 0.65 Bi 0.45 Cu 3 Ti 4 O 12 is narrowed.…”

Section: Methodscontrasting

confidence: 71%

“…As can be seen that the lowest value of tand is 0.086 at the frequency of 185 Hz. The value of tand at 1 kHz is found to be 0.152, which is much larger than that of Na 0.50 Bi 0.50 Cu 3 Ti 4 O 12 ceramics [10]. As the frequency is further raised, tand increases rapidly and a dielectric loss peak is formed at the frequency of 4.1 9 10 4 Hz.…”

Section: Dielectric Propertiesmentioning

confidence: 79%

“…These datas describe the grain is semiconducting and the grain boundaries is insulating, which is consistent with the internal barrier layer capacitance (IBLC) model. Compared to Na 0.50 Bi 0.50 Cu 3 Ti 4 O 12 ceramics [10], the values of grain and grain boundaries resistance in Na 0.65 Bi 0.45 Cu 3 Ti 4 O 12 ceramics is both larger than those in Na 0.50 Bi 0.50 Cu 3 Ti 4 O 12 ceramics (R g = 19.55 X, and R gb = 3.686 9 10 5 X, respectively). Therefore, the pattern of complex impedance observed in Na 0.65 Bi 0.45 Cu 3 Ti 4 O 12 ceramics are quite different with that found previously in Na 0.50 Bi 0.50 Cu 3 Ti 4 O 12 ceramics [8].…”

Section: Complex Impedance Analysismentioning

confidence: 85%

“…In a nutshell, the previous research work focused on mechanism and doping of NBCTO ceramics. Recently, an investigation on different proportions of Na to Bi in NBCTO ceramics, which have a formula of Na x Bi (2-x)/3 Cu 3 Ti 4 O 12 (x B 0.50), has been performed by our group [10]. When x B 0.50, different ratios of Na-Bi give rise to vary in amount of A-site vacancies.…”

Section: Introductionmentioning

confidence: 99%

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Dielectric responses of Na0.65Bi0.45Cu3Ti4O12 ceramics based on the composition design of changing the Na/Bi ratio

Yang

Chao

Wei

et al. 2015

J Mater Sci: Mater Electron

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Na 0.65 Bi 0.45 Cu 3 Ti 4 O 12 ceramics were successful prepared by the conventional solid-state reaction technique. Compared to Na 0.50 Bi 0.50 Cu 3 Ti 4 O 12 (NBCTO), the composition of Na 0.65 Bi 0.45 Cu 3 Ti 4 O 12 was designed in terms of changing the Na/Bi ratio. Colossal dielectric permittivity of *1.2 9 10 4 at 1 kHz was obtained in Na 0.65 Bi 0.45 Cu 3 Ti 4 O 12 ceramics. Interestingly, three frequency dispersions were observed in the frequency dependence of dielectric constant measured at different temperatures. The investigation of electric modulus displayed that the giant low-frequency dielectric constant was attributed to Maxwell-Wagner polarization at the grain boundaries and the frequency dispersion in middle-frequency range was due to the grain polarization. Except grain response and grain boundaries response reflected by two semicircles in the impedance spectroscopy, another electrical response associated with nonzero high frequency intercept was found. The grain resistance Rg and grain boundaries resistance R gb was *600 X and 3.9 9 10 5 X, respectively. The large intrinsic permittivity as high as *700 was obtained. Furthermore, two dielectric anomalies observed in the temperature dependent of dielectric constant were discussed in detail. The results indicated change in the Na/Bi ratio had a significant effect on the electrical properties of NBCTO ceramics.

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