Electrical properties and performances of natural diamond nuclear radiation detectors

Canali, C.; Gatti, E.; Kozlov, S. F.; Manfredi, P.F.; Manfredotti, C.; Nava, F.; Quirini, A.

doi:10.1016/0029-554x(79)90167-8

Cited by 144 publications

(59 citation statements)

References 5 publications

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“…The signal has been passed on to an Ortec 570 shaping amplifier followed by a multichannel analyzer for the pulse height spectra acquisition. The amplitudes have been calibrated in terms of CCE using a pulser, cross correlated with a 100% efficient silicon pin diode, assuming the average energy needed to create an electron hole pair of 3.6 and 13.2 eV in silicon 21 and diamond, 30 respectively. The ranges x of the 5.48 MeV ␣-particles and 2.6 MeV protons are 15 and 35 m, respectively, as calculated by SRIM.…”

Section: Methodsmentioning

confidence: 99%

Mapping of polarization and detrapping effects in synthetic single crystal chemical vapor deposited diamond by ion beam induced charge imaging

Lohstroh¹,

Sellin²,

Wang³

et al. 2007

Journal of Applied Physics

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Diamond has been regarded as a promising radiation detector material for use as a solid state ionizing chamber for decades. The parameters degrading the charge transport from what is expected from an ideal crystal are still not completely understood. Recently, synthetic chemical vapor deposited ͑CVD͒ single crystal diamond has become available, offering the opportunity to study the properties of synthesized material independent of grain boundaries. We have studied the charge transport of a synthetic single crystal diamond with ␣-particle induced charge transients as a function of temperature and established the presence of a shallow hole trap with an activation energy of 0.29± 0.02 eV in some parts of the detector. Ion beam induced charge imaging has been used to study the spatial variations of the charge transport in a synthetic single crystal diamond. Pulses influenced by the shallow hole trap had their origin close to the substrate/CVD interface of the sample. They could be clearly distinguished from pulses affected by reduced charge carrier velocities due to polarization phenomena, which varied systematically with the growth direction of the CVD diamond material.

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Section: Methodsmentioning

confidence: 99%

Mapping of polarization and detrapping effects in synthetic single crystal chemical vapor deposited diamond by ion beam induced charge imaging

Lohstroh¹,

Sellin²,

Wang³

et al. 2007

Journal of Applied Physics

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“…55,56 However, the value obtained lies somewhat below experimental results. [52][53][54] The observations just presented indicate that the values of mean free paths in diamond obtained with different models are inconsistent. They should be critically reviewed both at high and at the intermediate energies.…”

Section: Mean Free Path Fittedmentioning

confidence: 99%

Ionization by impact electrons in solids: Electron mean free path fitted over a wide energy range

Ziaja

London

Hajdu

2006

Journal of Applied Physics

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We propose a simple formula for fitting the electron ionization mean free paths in solids both at high and at low electron energies. The free-electron-gas approximation used for predicting electron mean free paths is no longer valid at low impact energies ͓͑E − E F ͒ Ͻ 50 eV͔, as the band structure effects become significant at those energies. Therefore, we include the results of band structure calculations in our fit. Finally, we apply the fit to nine elements and two compounds.

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“…To create electron-hole pairs to initiate TOF measurements, a pulsed electron beam [3,4], soft x-rays [5], or a UV laser [6,7,8] whose energy were greater than 5.49 eV were used as injection quanta. For self-standing diamond crystals, a TOF measurement system that was consisted of a 213 nm UV pulsed laser, passive circuits and a digital oscilloscope was previously developed by the authors [9,10]; good linearity of output signals and fast response, i.e.…”

Section: Introductionmentioning

confidence: 99%

Development of a TOF measurement system of charge carrier dynamics in diamond thin films using a UV pulsed laser

Fujita¹,

Oshiki²,

Kaneko³

et al. 2006

Diamond and Related Materials

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Prime Novelty Statement:A fast TOF measurement system for transport behavior of free-charged carriers in intrinsic diamond films by using a UV pulsed laser was developed. The UV laser light narrowed to less than 80 μm widths could locally create hole-electron pairs in selected locations on a diamond film between two separated electrodes on the surface. This system made it possible to measure true behavior of charge carriers in the diamond films, because charge carriers run in diamond without disturbance caused by laser irradiation. In addition, the local irradiation system succeeded to reduce an influence of photoelectrons created at electrodes by laser irradiation. For one of diamond film used for confirmation of the TOF system, transit time of holes was measured as 4.7 ns with covering a distance of 250 μm. Authorship Statement:The submission of the manuscript has been approved by all co-authors. A fast TOF measurement system with 150 ps time resolution for transport behavior of free charge carriers in an intrinsic diamond film by using a UV pulsed laser was developed. The 213nm UV laser light narrowed to approximately 80 μm widths could locally create holeelectron pairs in selected locations on a diamond film between two parallel electrodes on the surface. This system measured accurate charge transport characteristics in a diamond film, because created charge carriers moved in a part of the diamond film where did not get any influence from the laser irradiation. Diamond samples used for verification of the TOF system were intrinsic CVD diamond films with thickness between 4 to 10 μm grown on HP/HT diamond substrates. Transit time of holes for one diamond film was 4.7 ns with a traverse distance of 250 μm. The local irradiation of laser made it possible to measure transport characteristics of electrons and holes separately. In addition, it substantially reduced influence of photoelectron, because laser beam did not irradiate electrodes. Through several examinations, excellent reliability of the TOF system was confirmed.

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Electrical properties and performances of natural diamond nuclear radiation detectors

Cited by 144 publications

References 5 publications

Mapping of polarization and detrapping effects in synthetic single crystal chemical vapor deposited diamond by ion beam induced charge imaging

Mapping of polarization and detrapping effects in synthetic single crystal chemical vapor deposited diamond by ion beam induced charge imaging

Ionization by impact electrons in solids: Electron mean free path fitted over a wide energy range

Development of a TOF measurement system of charge carrier dynamics in diamond thin films using a UV pulsed laser

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