Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures

Abstract

GaN p-i-n rectifiers with 4 µm thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of currentvoltage characteristics in these diodes, along with hole diffusion lengths and the deep level defects present. Generally we find that i-layer background doping varies significantly (from <10 14 cm -3 to 2-3 × 10 16 cm -3 ), which influences the current conduction mechanism. The hole diffusion lengths were in the range 0.6-0.8 µm, while deep level concentrations were ~10 16 cm -3 .