Electrical properties of Al2O3 films for TFEL-devices made with sol–gel technology

Vanbesien, Karel; Visschere, Patrick De; Smet, Philippe; Poelman, Dirk

doi:10.1016/j.tsf.2006.02.034

Cited by 45 publications

(14 citation statements)

References 14 publications

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“…In the case of Al 2 O 3 , the k value of our sample is 7.04 at 1 kHz, which is at the lower end range of the literature values. [36,37] Typical leakage current behavior for the ZrO 2 and Al 2 O 3 samples is given in Figure 8 (in fact, soluble aluminum formate or aluminum hydroxy formate are formed), was spincoated on a 300 nm SiO 2 /Si substrate with Al gate electrodes (see Figure S6); the substrate 9 was then heated and exposed to UV for 30 mins at 150 C. This pre-treatment enhanced considerably the quality of the ZrO 2 dielectric layer.…”

Section: Resultsmentioning

confidence: 99%

UV‐Assisted Low Temperature Oxide Dielectric Films for TFT Applications

Hwang

Lee

Jeong

et al. 2014

Adv Materials Inter

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Section: Resultsmentioning

confidence: 99%

UV‐Assisted Low Temperature Oxide Dielectric Films for TFT Applications

Hwang

Lee

Jeong

et al. 2014

Adv Materials Inter

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“…Alumina is one of representative electricinsulating materials. Since it has high thermal conductivity and high chemical stability at high temperature compared to other electro-insulating materials such as glass, plastic, and paper [4][5][6], it is promising as the electric-insulating material used in the electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Synthesis of α-Alumina with a Seeding Technique

et al. 2013

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This paper reports a method for producing -Al 2 O 3 at low temperature, which uses a seeding technique. White precipitate of aluminum hydroxide, which was prepared with a homogeneous precipitation method using aluminum nitrate and urea in aqueous solution, was peptized by using acetic acid at room temperature and then transformed to a transparent alumina sol. To the alumina sol -Al 2 O 3 particles were added as a seed, and then the sol containing -Al 2 O 3 particles was transformed to an -Al 2 O 3 -seeded alumina gel by drying the sol at room temperature. The nonseeded alumina gel was amorphous or fine crystallites even after being annealed at 600 ∘ C and was crystallized to -Al 2 O 3 at 700 ∘ C. The -Al 2 O 3 seeding promoted crystallization of alumina gel toAl 2 O 3 . The promotion of crystallization was made remarkable with a decrease in -Al 2 O 3 particle size and an increase in -Al 2 O 3 particle content in weight for the final seeded alumina gel. With an -Al 2 O 3 particle size of 150 nm and an -Al 2 O 3 particle content of 5%, the seeded alumina gel was partially crystallized to -Al 2 O 3 by annealing at a temperature as low as 700 ∘ C and mostly at 900 ∘ C.

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“…Aluminium oxide is a versatile and technologically important material because of its wide transparency window from ultra-violet to mid-infrared [1][2][3], good thermal and chemical stability [4,5], and superior electrical and mechanical properties [6,7].…”

Section: Introductionmentioning

confidence: 99%

“…Especially aluminium oxide in thin film form has a broad application range including use as water-repellent coating [8,9], dielectric [6] and sensing layer [10] and optical [11] and protective coating [1,[12][13][14][15]. These application areas make synthesis and characterization of aluminium oxide films attractive.…”

Section: Introductionmentioning

confidence: 99%

Optical and structural properties of aluminium oxide thin films prepared by a non-aqueous sol–gel technique

Avci

Smet

Lauwaert

et al. 2011

J Sol-Gel Sci Technol

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Clear aluminium oxide sols without precipitation were synthesized via a non-aqueous sol-gel technique using three different alcohols (ethanol, isopropanol and n-butyl alcohol) as solvent, aluminium sec-butoxide as a precursor and acetyl acetone as a chelating agent. Although all sols could be successfully used to prepare thin films, the most stable one was prepared with n-butyl alcohol. Highly transparent, homogenous and amorphous aluminium oxide thin films were obtained on Si substrates after a heat treatment at 500⁰C. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared absorption (FT-IR) spectroscopy revealed all 2 films were hydroxide free. The optical and structural properties of the films were particularly investigated. Any significant difference except from thickness on the film properties was not observed by changing the alcohol. Refractive index was used as an indication of the porosity of the films and ranged from 1.54 to 1.60..

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Electrical properties of Al2O3 films for TFEL-devices made with sol–gel technology

Cited by 45 publications

References 14 publications

UV‐Assisted Low Temperature Oxide Dielectric Films for TFT Applications

UV‐Assisted Low Temperature Oxide Dielectric Films for TFT Applications

Low Temperature Synthesis of α-Alumina with a Seeding Technique

Optical and structural properties of aluminium oxide thin films prepared by a non-aqueous sol–gel technique

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