Electrical properties of atomic layer deposited Al2O3 with anneal temperature for surface passivation

Suh, Dong Chul; Liang, Wensheng

doi:10.1016/j.tsf.2013.05.082

Cited by 28 publications

(12 citation statements)

References 27 publications

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“…15,16 Negative fixed charges can be partially explained by the impact of vacuum ultraviolet radiation from the plasma. In fact, negative charge density is proportional to the plasma exposure time.…”

Section: Results For Single Layer Of Al 2 O 3 or Hfomentioning

confidence: 99%

Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering

Hajjam¹,

Baboux²,

Calmon

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The development of metallic single electron transistor (SET) depends on the downscaling and the electrical properties of its tunnel junctions. These tunnel junctions should insure high tunnel current levels, low thermionic current, and low capacitance. The authors use atomic layer deposition to fabricate Al2O3 and HfO2 thin layers. Tunnel barrier engineering allows the achievement of low capacitance Al2O3 and HfO2 tunnel junctions using optimized annealing and plasma exposure conditions. Different stacks were designed and fabricated to increase the transparency of the tunnel junction while minimizing thermionic current. This tunnel junction is meant to be integrated in SET to enhance its electrical properties (e.g., operating temperature, ION/IOFF ratio).

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Section: Results For Single Layer Of Al 2 O 3 or Hfomentioning

confidence: 99%

Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering

Hajjam¹,

Baboux²,

Calmon

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…In recent years, aluminum oxide (Al 2 O 3 ) thin films have been used to significantly improve silicon solar cell efficiency by providing effective surface passivation, as they feature both a relatively high fixed negative charge density as well as a low interface defect density . Various deposition techniques have been developed to deposit Al 2 O 3 (or AlO x ) for surface passivation, including atomic layer deposition (ALD) , plasma enhanced chemical vapour deposition (PECVD) , sputtering , atmospheric pressure chemical vapor deposition (APCVD) , and reactive sputter deposition .…”

Section: Introductionmentioning

confidence: 99%

Degradation of the surface passivation of plasma-assisted ALD Al₂O₃under damp-heat exposure

Liang

Suh

et al. 2014

Phys. Status Solidi A

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The effect of humidity on boron diffused and undiffused silicon samples passivated by aluminum oxide (Al2O3) synthesized by plasma‐assisted atomic layer deposition (PA‐ALD) is investigated. It is found that samples exposed to a saturated humidity ambient show a much higher degradation rate than those exposed to 85% relative humidity (RH). The surface recombination velocity Seff increased by 25% for RH = 85% but by more than two orders of magnitude for 100% RH after 10 days of exposure. Moreover, the electrical resistance of Al2O3 film also decreased significantly following saturated humidity exposure. PECVD SiNx:H capping layers are effective at protecting Al2O3 films from damp‐heat stress. Two degradation regimes are proposed to explain the degradation: (i) initial reversible degradation at shorter time exposures, which is ascribed to the loss of field effect passivation; (ii) severe degradation after longer term exposure, which is believed to be due to a substantial loss of chemical passivation with the generation of new species from the reaction of Al2O3 and water. The second regime was only observed for saturated humidity conditions.

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“…As the annealing temperature increases over 500 • C, the lifetime starts to decrease. Lifetime reduction at high annealing temperature has also been obtained by other research groups [9,10].…”

Section: Resultsmentioning

confidence: 64%

Performance Improvement of High Efficiency Mono-Crystalline Silicon Solar Cells by Modifying Rear-Side Morphology

et al. 2017

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Abstract:In this work, aluminum oxide films with excellent passivation effects were prepared on the rear-side surface of passivated emitter and rear cells (PERCs) using a self-developed spatial atomic layer deposition system. Various rear-side surface morphologies were obtained through different etching treatments. We compared the PERCs with standard etching treatment and further polishing processes on rear-side surfaces. Experimental results show that compared with the unpolished cell, the polished cell attained superior electrical performance, particularly in open-circuit voltage (V oc ) and short-circuit current density (J sc ), because of the more effective rear-side surface passivation and reabsorption of long-wavelength light. The improvement in V oc and J sc raised the conversion efficiency to 19.27%. This study verifies that despite polished cells requiring complex processes, the polishing treatment displays application potential for achieving high efficiency in the solar industry.

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Electrical properties of atomic layer deposited Al2O3 with anneal temperature for surface passivation

Cited by 28 publications

References 27 publications

Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering

Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering

Degradation of the surface passivation of plasma-assisted ALD Al₂O₃under damp-heat exposure

Performance Improvement of High Efficiency Mono-Crystalline Silicon Solar Cells by Modifying Rear-Side Morphology

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Electrical properties of atomic layer deposited Al2O3 with anneal temperature for surface passivation

Cited by 28 publications

References 27 publications

Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering

Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering

Degradation of the surface passivation of plasma-assisted ALD Al2O3under damp-heat exposure

Performance Improvement of High Efficiency Mono-Crystalline Silicon Solar Cells by Modifying Rear-Side Morphology

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Degradation of the surface passivation of plasma-assisted ALD Al₂O₃under damp-heat exposure