Electrical properties of (Bi,La)4Ti3O12-based ferroelectric-gated field effect transistors employed with a thermally oxidized SiO2 layer

Magnetic properties of La0.7Sr0.3MnO3 under the pressure and the transport property under the magnetic field

“…The spin-orbit coupling plays a significant role in the electronic band structure, magnetic properties, and the electrical transport behavior in lots of strongly correlated systems containing 4d and 5d transitional elements, because of its approximate energy to the Coulomb repulsive energy and crystal field interaction energy [1][2][3][4][5][6] ; technologically, the spin current can be controlled by the electric field or the pressure through the spin-orbit coupling effect, 7 which is promising in data storage 8,9 and planar quantum Hall effect devices. 10 The perovskite manganite containing 3d element exhibits rich physics due to the interaction of chargespin-orbit-lattice dfs, 11,12 such as the Mn 3+ -O-Mn 4+ double-exchange ferromagnetism, [13][14][15][16][17] the Mn 3+ -O-Mn 3+18-23 or Mn 4+ -O-Mn 4+24-28 super-exchange antiferromagnetism, the Jahn-teller (J-T) distortion caused by the interaction between the e g electrons in Mn 3+ ions and the lattice [29][30][31] .…”

Fabrication and characterization of silicon-based Ba<inf>0.7</inf>Sr<inf>0.3</inf>TiO<inf>3</inf> thin films for FeFET applications

“…Numerous materials are applicable but not more stable than a layer of SiO 2 , however, it consider promising material to control the gate potential through FET junction [5]. Furthermore, using SiO 2 (ε ~3.9) as insulating material reduces the electric field and polarization effects in the ferroelectric layer, since most of the applied field drops across it due to the low permittivity value [6,7].…”