2011
DOI: 10.1149/1.3564877
|View full text |Cite
|
Sign up to set email alerts
|

Electrical Properties of Bi2Ti2O7 Thin Films Grown at Low Temperature by the Pulsed Laser Deposition

Abstract: A crystalline Bi 2 Ti 2 O 7 (B 2 T 2 ) film with a high dielectric constant (e r ) of 67.2 was formed even at 300 C when the oxygen pressure (OP) exceeded 600 mTorr, even though the Bi 4 Ti 3 O 12 target was used. The Mn-doping improved the electrical properties of the B 2 T 2 films by producing the doubly ionized, extrinsic oxygen vacancies, which reduced the number of intrinsic oxygen vacancies. The B 2 T 2 film containing 20 mol% of Mn ions, which was annealed under an OP of 75.0 Torr, exhibited a low leaka… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2017
2017
2017
2017

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
references
References 20 publications
0
0
0
Order By: Relevance