Electrical properties of boron-doped MWNTs synthesized by hot-filament chemical vapor deposition

Ishii, Satoshi; Nagao, Masanori; Watanabe, Tohru; Tsuda, S.; Yamaguchi, Takahide; Takano, Yoshihiko

doi:10.1016/j.physc.2009.05.183

Cited by 9 publications

(7 citation statements)

References 13 publications

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“…The structural properties are primarily attributed to the composition of the catalyst; therefore, in-growth substitutional doping of boron into the lattice of FWNTs was facilitated with the same powder catalyst as seen in figure 1(a). Ishii et al demonstrate a CVD process to grow boron-doped B-FWNTs with a solution of boric acid dissolved in methanol pumped into the furnace as the source solution [28]. Although the carbon source utilized to grow FWNTs is methane, alcohol solutions have been demonstrated as successful sources for FWNT growth [29].…”

Section: Resultsmentioning

confidence: 99%

Boron-doped few-walled carbon nanotubes: novel synthesis and properties

Preston

Taillon

et al. 2016

Nanotechnology

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Few-walled carbon nanotubes offer a unique marriage of graphitic quality and robustness to ink-processing; however, doping procedures that may alter the band structure of these few-walled nanotubes are still lacking. This report introduces a novel solution-injected chemical vapor deposition growth process to fabricate the first boron-doped few-walled carbon nanotubes (B-FWNTs) reported in literature, which may have extensive applications in battery devices. A comprehensive characterization of the as-grown B-FWNTs confirms successful boron substitution in the graphitic lattice, and reveals varying growth parameters impact the structural properties of B-FWNT yield. An investigation into the optimal growth purification parameters and ink-making procedures was also conducted. This study introduces the first process technique to successfully grow intrinsically p-doped FWNTs, and provides the first investigation into the impact factors of the growth parameters, purification steps, and ink-making processes on the structural properties of the B-FWNTs and the electrical properties of the resulting spray-coated thin-film electrodes.

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Section: Resultsmentioning

confidence: 99%

Boron-doped few-walled carbon nanotubes: novel synthesis and properties

Preston

Taillon

et al. 2016

Nanotechnology

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“…Figure 4 shows the Raman spectra of neat MWCNT and PMMA/SAN nanocomposites containing 1.5 wt % MWCNT. Peaks around 1350 and 1590 cm −1 are referred to as D and G band, respectively; G band is known to originate from MWCNT 25. In this spectra, the positions of this G band for P/S(1/9)‐1.5, P/S(5/5)‐1.5, and P/S(1/9)‐1.5 are 1584, 1592, and 1596, respectively, while that of neat MWCNT is 1584.…”

Section: Resultsmentioning

confidence: 99%

Morphology and electrical properties of polymethylmethacrylate/poly(styrene‐co‐acrylonitrile)/multi‐walled carbon nanotube nanocomposites

Jeon

Min

Kim

2011

J of Applied Polymer Sci

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Nanocomposites of blends of polymethylmethacrylate (PMMA) and poly(styrene-co-acrylonitrile) (SAN) with multi-walled carbon nanotubes (MWCNTs) were prepared by melt mixing in a twin-screw extruder. The dispersion state of MWCNTs in the matrix polymers was investigated using transmission electron microscopy. Interestingly enough, in most of the nanocomposites, the MWCNTs were observed to be mainly located at SAN domains, regardless of the SAN compositions in the PMMA/SAN blend and of the processing method. One possible reason for this morphology may be the p-p interactions between MWCNTs and the phenyl ring of SAN. The shift in G-band peak observed in the Raman spectroscopy may be the indirect evidence proving these interactions. The percolation threshold for electrical conductivity of PMMA/SAN/ MWCNT nanocomposites was observed to be around 1.5 wt %. Nanocomposites with PMMA-rich composition showed higher electrical conductivity than SAN-rich nanocomposites at a fixed MWCNT loading. The dielectric constant measurement also showed composition-dependent behavior.

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“…MWCNTs were synthesized by a hot filament method. 14) As-grown CNTs were formed on a Si substrate covered with thermally grown SiO 2 of 500 nm thickness. The boron concentration in the source material was set to 1.0 at.…”

Section: Methodsmentioning

confidence: 99%

“…Detailed growth conditions were described in ref. 14. The structure information of a MWCNT synthesized under the same condition as the MWCNT whose resistance under pressure was measured is also described in ref.…”

Section: Methodsmentioning

confidence: 99%

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Effect of Pressure on the Electrical Resistance of Individual Boron-Doped Carbon Nanotubes

Watanabe

Tomioka

Ishii

et al. 2012

Jpn. J. Appl. Phys.

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The electrical resistance of an individual boron-doped multi-walled carbon nanotube was measured under high pressure up to 1.73 GPa. The resistance decreased drastically when pressure was applied. The temperature dependence of the resistance was explained by a variable range hopping transport model, and the dimensionality was observed to change from one to three dimensions with increasing pressure.

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Electrical properties of boron-doped MWNTs synthesized by hot-filament chemical vapor deposition

Cited by 9 publications

References 13 publications

Boron-doped few-walled carbon nanotubes: novel synthesis and properties

Boron-doped few-walled carbon nanotubes: novel synthesis and properties

Morphology and electrical properties of polymethylmethacrylate/poly(styrene‐co‐acrylonitrile)/multi‐walled carbon nanotube nanocomposites

Effect of Pressure on the Electrical Resistance of Individual Boron-Doped Carbon Nanotubes

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