Electrical properties of cadmium and Zinc doped CuAlS2

Aksenov, Igor; Makovetskaya, L. A.; Savchuk, V. A.

doi:10.1002/pssa.2211080164

Cited by 9 publications

(7 citation statements)

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“…As S , Zn Al , and Mg Al are found to be excellent p-type dopants for CuAlS 2 , with conductivities reaching 1 (thin film), 63.5 (thin film), 41.7 S cm –1 (bulk), respectively. CuAlS 2 has also been reported n-type dopable by Cd Cu , Al Cu , and Zn Cu at high growth temperatures . It is important to note that the optical band gap drops when p-doping the Al site, likely due to the increased VBM energy and presence of undetected Cu x S impurities but does not under Cu-poor and S-rich conditions. , …”

Section: Methodsmentioning

confidence: 95%

“…CuAlS 2 (see Figure a) has the widest band gap (∼3.4–3.5 eV) among all the I–III-Ch 2 chalcopyrite compounds and hence is the most transparent . It was first investigated as a blue-UV LED material, , then later as a transparent semiconductor, and has been synthesized using a wide variety of bulk and thin film techniques. − The p-type conductivity of undoped, near-stoichiometric CuAlS 2 only reaches 0.9 S cm –1 (bulk) and 0.016 S cm –1 (thin film) . However, altering the I/III cation ratio allows for drastic changes in electronic properties.…”

Section: Methodsmentioning

confidence: 99%

“…CuAlS 2 has also been reported n-type dopable by Cd Cu , Al Cu , and Zn Cu at high growth temperatures. 242 It is important to note that the optical band gap drops when p-doping the Al site, likely due to the increased VBM energy and presence of undetected Cu x S impurities but does not under Cu-poor and S-rich conditions. 11,248 CuAlSe 2 has a reported experimental band gap at nearstoichiometry of ∼2.6−2.7 eV and has been investigated for multiple applications, for example, blue LEDs, solar cells, and optical filters.…”

Section: Ternary Chalcopyrite I-iii-ch 2 Compoundsmentioning

confidence: 99%

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Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO) used in displays, carbides (e.g. SiC) and nitrides (e.g. GaN) used in power electronics, as well as emerging halides (e.g. g-CuI) and 2D electronic materials (e.g. graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out due to their propensity for ptype doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent conductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E G > 2 eV) chalcogenide materials, such as II-VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed anion layered CuMCh(O,F), and 2D materials, among others, and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors, e.g. photovoltaic and photoelectrochemical solar cells, transparent transistors, and light emitting diodes, that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent conductors and to enable future innovations for optoelectronic devices.

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Section: Methodsmentioning

confidence: 95%

Section: Methodsmentioning

confidence: 99%

Section: Ternary Chalcopyrite I-iii-ch 2 Compoundsmentioning

confidence: 99%

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Wide Band Gap Chalcogenide Semiconductors

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“…Similar behaviour is observed for Cd-and Mg-doped samples. This can be explained by the amphoteric doping properties of group II elements in Cu-III-VI 2 chalcopyrites [36][37][38][39][40][41][42]. The dopant can either occupy the Cu lattice site, acting as donor (II Cu ), or the Ga site, acting as acceptor (II Ga ).…”

Section: Doping By Group II Elementsmentioning

confidence: 99%

Extrinsic doping of CuGaSe₂single crystals

Schön

2000

J. Phys. D: Appl. Phys.

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Technological applications of semiconductors depend critically on the ability to dope them. Single crystals of CuGaSe2 were doped during crystal growth either by a post-growth diffusion step or by ion-implantation, in order to study the limits of extrinsic doping. The electrical and optical properties of the doped samples are analysed by Hall effect and photoluminescence (PL) measurements. The carrier concentration at room temperature can be adjusted between 2 × 1019 cm-3 (p-type) and 1017 cm-3 (n-type). Various donor and acceptor levels are identified and ascribed to dopant-induced point defects taking into account the dopant concentration and/or the post-growth treatment of the single crystals.

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“…CuAlS 2 requires the broadest band gap (~3.4-3.5 eV) midst entirely (I-III-Ch2) chalcopyrite complexes, then later is the greatest transparent [7]. It remained initial explored by means of blue (UV LED) material [8,9], AsS, ZnAl, and MgAl be located exceptional p-type dopant designed for CuAlS 2 [10]. The band gap droplets immediately p-doping the Al site, probable by reason of the augmented VBM energy plus attendance of unnoticed CuxS impurities, nevertheless organizes not below Cu-poor and S-rich situations [11,12].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and evaluation of CuAlSe2/Si photodetector

Hassun¹,

Al-Maiyaly²,

Shaban³

2023

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In this work, we have examined the spectral response of (p-CuAlSe2/n-Si) detector, (CAS) thin films deposited by thermal evaporation at RT with a thickness (450) nm, and annealing temperature at (473K) for 2 h. Optical transmission measurements displayed reasonably slight transmission besides higher absorbance trendy the visible region, energy gaps were observed by annealing, were found to be direct, and decreased with the effect of annealing. The extreme responsivity value arises at wavelength 459 nm, with improvement value of specific detectivity and quantum efficiency the annealing films be situated originate as greatest suitable aimed at numerous device application.

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Electrical properties of cadmium and Zinc doped CuAlS2

Cited by 9 publications

References 5 publications

Wide Band Gap Chalcogenide Semiconductors

Wide Band Gap Chalcogenide Semiconductors

Extrinsic doping of CuGaSe₂single crystals

Fabrication and evaluation of CuAlSe2/Si photodetector

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Electrical properties of cadmium and Zinc doped CuAlS2

Cited by 9 publications

References 5 publications

Wide Band Gap Chalcogenide Semiconductors

Wide Band Gap Chalcogenide Semiconductors

Extrinsic doping of CuGaSe2single crystals

Fabrication and evaluation of CuAlSe2/Si photodetector

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Product

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Extrinsic doping of CuGaSe₂single crystals