Electrical properties of copper-nickel manganite thin films prepared by metal-organic decomposition

Jeon, Chang Jun; Jeong, Young Hun; Yun, Ji Sun; Park, Woon Ik; Paik, Jong Hoo; Hong, Youn Woo; Kim, Eung Soo; Cho, Jeong Ho

doi:10.1016/j.ceramint.2017.04.088

Cited by 8 publications

(11 citation statements)

References 18 publications

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“…Clearly, Cu doping provides a signi cant decrease in the resistivity, but degrades the lm sensitivity. A drop in TCR with Cu doping was also reported by Cho et al [9] for spin-sprayed nickel manganite thin lms, but the possible reasons for this behavior are still under investigation. On the other hand, the presence of Zn in the compositions is found to improve the TCR, which varies in the range of 2.82 to 3.54% K − 1 for the (Zn,Cu) co-doped system.…”

Section: Electrical Propertiessupporting

confidence: 55%

“…Modifying the composition of nickel manganite compounds with appropriate transition metal ions (suitable for tetrahedral sites occupation) has been found to allow Ni 2+ to occupy octahedral sites, thus improving the electrical conductivity [7]. Among various elements, Cu has been reported as the most effective ion for lowering the resistivity; unfortunately, Cu doping also degrades the electrical stability [7][8][9]. Chen et al…”

Section: Introductionmentioning

confidence: 99%

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Electrical properties and aging behavior of nickel manganite thin films co-doped with Cu and Zn annealed at low temperature

2020

Preprint

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Nickel-manganite-based thin films with a negative temperature coefficient of resistance (NTCR) characteristic were prepared from (Ni 0.2 Mn 2.8– x Cu x )Cl 2 (0.010£ x £0.040) solutions using the liquid flow deposition (LFD) method. The influence of Cu on the electrical properties of the films annealed at 400 °C was investigated. Adding Cu ( x = 0.025) was found to quite effectively lower the electrical resistivity ( ρ ) of the films to 200 W cm, whereas their sensitivity behavior was significantly degraded. Interestingly, the absolute temperature coefficient of resistance ( TCR ) of the films was enhanced by further adding 0.01 mol Zn along with Cu, without a remarkable increase in ρ . TCR = 2.98% K – 1 and ρ = 880 W cm at room temperature were attained for the Zn-containing specimen with 0.020 mol Cu doping. Moreover, the films with (Zn,Cu) co-doped compositions showed a much higher electrical stability than the Zn-free films.

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Section: Electrical Propertiessupporting

confidence: 55%

Section: Introductionmentioning

confidence: 99%

Electrical properties and aging behavior of nickel manganite thin films co-doped with Cu and Zn annealed at low temperature

2020

Preprint

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“…Hence, various transition metal ions have been added into nickel manganites in different ways to improve the sensing performance [1,4,6]. Among the transition elements, Cu is the most effective for enhancing the conductivity of nickel manganitesdue to the insertion of monovalent copper (Cu + ) ions into the A sites [7][8][9], which leads to the displacement of Ni 2+ cations from the A sites to the B sites of the spinel structure. Therefore, ceramics with Mn-Ni-Cu-O composition have become one of the most important thermistor materials.…”

Section: Introductionmentioning

confidence: 99%

Solution Synthesis of Cubic Spinel Mn–Ni–Cu–O Thermistor Powder

2021

Materials

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Toward the development of NTCR thermistors, nanocrystalline Mn–Ni–Cu–O powder was synthesized from a mixed chloride aqueous solution by a simple co-precipitation method.The introduction of an oxidizing agent (H2O2) into the solution led to the partial oxidation of Mn2+ ions into Mn3+ ions, which enabled the collected powder to be well crystallized at 650 °C. Such a low calcining temperature resulted in fine particles with a mean size of 60 nm, which significantly promoted densification of the resulting ceramics. As a result, a dense and homogenous microstructure with a relative density up to 97.2% was achieved for pellets sintered at 1100 °C. Furthermore, these sintered ceramics exhibited a room temperature resistivity (ρ25) of 67 Ω·cmand a thermistor constant (B25/85) of 2843 K, which make them suitable for use in industrial thermistors. In addition, electrical stability was greatly improved when the ceramics were prepared by a new two-step sintering method. The results suggest that the co-precipitation route with the introduction of H2O2 is suitable for the fabrication of cubic spinel thermistor nanopowders.

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“…Among them, vanadium oxide is the most widely used given its high temperature coefficient of resistance (TCR; >2.5%/K) and low-cost preparation methods [1,2]. However, this material shows a narrow operating temperature window due to the semiconductor-metal transition at~67°C, as well as difficulty in controlling the precise composition during deposition [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…Several groups including He et al fabricated nickel manganite based spinel thin films using chemical solution deposition method, but it requires a relatively high annealing temperature [7,8]. In previous study, we have also fabricated [(Ni 0.2 Mn 0.8 ) 1-x Cu x ] 3 O 4 (0.25 ≤ x ≤ 0.40) thin films using the metal-organic decomposition (MOD) method, and demonstrated that the thin films have high absolute TCR values (>3%/K) and low resistivity (<50 Ω cm) [4]. Although the TCR and resistivity outcomes are sufficient, it is not easy to apply them for use in an uncooled microbolometer because the annealing temperature is too high (450°C T annealing temperature (≤400°C) for the direct integration onto a substrate having complementary metal-oxide-semiconductor (CMOS) read-out circuitry [9].…”

Section: Introductionmentioning

confidence: 99%

Correlation between electrical properties and cation distribution in [(Ni Mn1-)0.84Cu0.16]3O4 thin films prepared by metal-organic decomposition for microbolometer applications

2019

Self Cite

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A B S T R A C T[(Ni x Mn 1-x ) 0.84 Cu 0.16 ] 3 O 4 (0.20 ≤ x ≤ 0.40) thin films have been prepared using the metal-organic decomposition method for microbolometer applications. Spinel thin films with a thickness of approximately 100 nm were obtained from the [(Ni x Mn 1-x ) 0.84 Cu 0.16 ] 3 O 4 films annealed at the low temperature of 380°C for 5 h, which enables their direct integration onto substrates having complementary metal-oxide-semiconductor (CMOS) readout circuitry. To obtain negative-temperature-coefficient films with reasonable performance through low enough temperature anneal process, Ni content has been systematically varied, and the film microstructure has been found to depend on the relative amount of Ni and Mn. A single phase of cubic spinel structure has been confirmed in the prepared films. The resistivity (ρ) of the annealed films decreases with increasing Mn 4+ /Mn 3+ value due to the hopping mechanism between Mn 3+ and Mn 4+ cations in octahedral sites of spinel structure. Although the temperature coefficient of resistance (TCR) of the annealed films has been decreased slightly with the increase of Ni content, good enough properties of the film (ρ = 61.3 Ω•cm, TCR = −2.950%/K in x = 0.30 film) has been obtained even with the annealing at rather low temperature of 380°C, thus enabling the direct integration onto substrates having read-out circuitry. The results obtained in this work are promising for applications to CMOS integrated microbolometer devices. ⁎ Corresponding authors.

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Electrical properties of copper-nickel manganite thin films prepared by metal-organic decomposition

Cited by 8 publications

References 18 publications

Electrical properties and aging behavior of nickel manganite thin films co-doped with Cu and Zn annealed at low temperature

Electrical properties and aging behavior of nickel manganite thin films co-doped with Cu and Zn annealed at low temperature

Solution Synthesis of Cubic Spinel Mn–Ni–Cu–O Thermistor Powder

Correlation between electrical properties and cation distribution in [(Ni Mn1-)0.84Cu0.16]3O4 thin films prepared by metal-organic decomposition for microbolometer applications

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