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The mechanical and electrical deterioration of chromium (Cr) thin films sputtered onto polyethylene terephthalate (PET) substrates under tensile strain was studied. Understanding mechanical and electrical stability due to imposed strain is particularly important for device reliability, as the demand for flexible electronic devices increases. Cr thin films, widely spread across the field of electronic and sensor applications, face crack propagation with electrical degradation with tensile stress that can seriously compromise the performance. Accordingly, this study offers new findings on how Cr film thickness might influence crack formation and electrical resistance differently and also the general guidelines for flexible electronic component design with respect to long-term durability. Electrical resistances were measured while mechanically stretching 100- and 200 nm thin sheets. The study focused on crack development and propagation mechanisms in both film thicknesses and their effects on percentage change in electrical resistance (PCER). Scanning electronic microscopy (SEM) was used to characterize surface morphology and observe cracks as the strain rose. Early crack formation in 100 nm Cr films led to rapid PCER increases due to quick crack propagation and fast electrical degradation. Thicker 200 nm films, however, showed a more gradual PCER rise with fewer but deeper cracks, indicating a regulated strain response. Unlike the sharp PCER spike in 100 nm films, 200 nm samples were more variable, with three out of four showing a slight PCER decrease at the end, hinting at partial crack repair or conductive realignment before full failure. These results underscore the role of layer thickness in managing crack propagation and electrical stability, relevant for flexible electronics and strain sensors. This paper is aligned with the ninth goal of the United Nations Sustainable Development Goals, specifically Target 9.5: Enhance Research and Upgrade Industrial Technologies.
The mechanical and electrical deterioration of chromium (Cr) thin films sputtered onto polyethylene terephthalate (PET) substrates under tensile strain was studied. Understanding mechanical and electrical stability due to imposed strain is particularly important for device reliability, as the demand for flexible electronic devices increases. Cr thin films, widely spread across the field of electronic and sensor applications, face crack propagation with electrical degradation with tensile stress that can seriously compromise the performance. Accordingly, this study offers new findings on how Cr film thickness might influence crack formation and electrical resistance differently and also the general guidelines for flexible electronic component design with respect to long-term durability. Electrical resistances were measured while mechanically stretching 100- and 200 nm thin sheets. The study focused on crack development and propagation mechanisms in both film thicknesses and their effects on percentage change in electrical resistance (PCER). Scanning electronic microscopy (SEM) was used to characterize surface morphology and observe cracks as the strain rose. Early crack formation in 100 nm Cr films led to rapid PCER increases due to quick crack propagation and fast electrical degradation. Thicker 200 nm films, however, showed a more gradual PCER rise with fewer but deeper cracks, indicating a regulated strain response. Unlike the sharp PCER spike in 100 nm films, 200 nm samples were more variable, with three out of four showing a slight PCER decrease at the end, hinting at partial crack repair or conductive realignment before full failure. These results underscore the role of layer thickness in managing crack propagation and electrical stability, relevant for flexible electronics and strain sensors. This paper is aligned with the ninth goal of the United Nations Sustainable Development Goals, specifically Target 9.5: Enhance Research and Upgrade Industrial Technologies.
With the rapid development of modern science and technology, the stability and reliability of electronic components become essential. Low-temperature drift resistors (LTDRs) are of importance owing to their excellent performance and stability in different temperature environments. LTDR technology is now widely used in the industrial field. This paper reviews the research status of LTDRs in order to provide reference for researchers and engineers in related fields. First, the basic principle of LTDRs is briefly discussed. A brief explanation of the mechanism behind low-temperature drift is illustrated. Second, the materials, types, and manufacturing processes of LTDRs are classified and discussed. The review ends with a brief conclusion concerning the challenges from mechanism to application and the future outlook.
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