Electrical Properties of CuInSe<sub>2</sub> Single Crystals Implanted with Xenon

Tomlinson, R. D.; Yakushev, М. V.; Neumann, H.

doi:10.1002/crat.2170280221

Cited by 13 publications

(3 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The third change is the new level state detected at low dose having the ionization energy of 223 meV. It coincides well with the one reported by Tomlinson and co-workers [9] and attributed to the acceptor state Cu In .…”

Section: Resultssupporting

confidence: 90%

“…• Region 2 (0.92 ≤ hν ≤ 1.02 eV): the fundamental edge region which shows clearly the direct band to band transition of CuInSe 2 . The maximum coincides well with the reported value of the gap energy for CuInSe 2 single crystals [9], E g = 1.01 eV, indicated by an arrow in the gures. The xenon implantation process is seen to aect the shoulder which is close to the maximum of the edge.…”

Section: Resultssupporting

confidence: 88%

See 1 more Smart Citation

A Photoacoustic Study of Xenon Implantation in CuInSe₂

2011

View full text Add to dashboard Cite

In this paper, we report a study on the optical properties of xenon ion implanted CuInSe2 single crystals using a high resolution near-infrared photoacoustic spectrometer of the gas-microphone type. Samples of high quality of CuInSe2, p-type conducting, have been implanted with Xe + at 40 keV with doses of 5 × 10 15 , 10 16 and 5 × 10 16 ions/cm 2. Photoacoustic spectra have been measured before and after implantation. A newly developed theoretical model based on a two-layer sample conguration has been used to single out the spectral dependence of the absorption coecient of the implanted layer from that of the substrate. The absorption spectra were used to evaluate the gap energy and to establish ionization energies for several shallow and deep defect states. The resulting eects following the introduction of xenon into CuInSe2 at dierent doses are discussed in the light of published literature.

show abstract

Section: Resultssupporting

confidence: 90%

Section: Resultssupporting

confidence: 88%

A Photoacoustic Study of Xenon Implantation in CuInSe₂

2011

View full text Add to dashboard Cite

show abstract

“…38 An increase in resistivity has also been reported after ion implantation of Xe into CuInSe 2 single crystals. 39 FIG. 6.…”

Section: E Possible Defects Associated With W-linesmentioning

confidence: 99%

A photoluminescence study of excitonic grade CuInSe2 single crystals irradiated with 6 MeV electrons

Yakushev

Mudryi

Borodavchenko

et al. 2015

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

This version is available at https://strathprints.strath.ac.uk/54688/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the High-quality single crystals of CuInSe 2 with near-stoichiometric elemental compositions were irradiated with 6 MeV electrons, at doses from 10 15 to 3 Â 10 18 cm À2 , and studied using photoluminescence (PL) at temperatures from 4.2 to 300 K. Before irradiation, the photoluminescence spectra reveal a number of sharp and well resolved lines associated with free-and bound-excitons. The spectra also show broader bands relating to free-to-bound transitions and their phonon replicas in the lower energy region below 1.0 eV. The irradiation with 6 MeV electrons reduces the intensity of the free-and the majority of the bound-exciton peaks. Such a reduction can be seen for doses above 10 16 cm À2 . The irradiation induces new PL lines at 1.0215 eV and 0.9909 eV and also enhances the intensity of the lines at 1.0325 and 1.0102 eV present in the photoluminescence spectra before the irradiation. Two broad bands at 0.902 and 0.972 eV, respectively, are tentatively associated with two acceptor-type defects: namely, interstitial selenium (Se i ) and copper on indium site (Cu In ). After irradiation, these become more intense suggesting an increase in the concentration of these defects due to irradiation. V C 2015 AIP Publishing LLC.[http://dx

show abstract

Influence of proton implantation on the properties of CuInSe₂ single crystals (I). Ion channeling study of lattice damage

Yakushev

Tomlinson

Neumann³

1994

Cryst. Res. Technol.

Self Cite

View full text Add to dashboard Cite

The lattice damage of p-type CuInSe, single crystals implanted with 10 keV protons in the fluence range from 2.5 . to 8 . 1OI5 cm-' was investigated using the Rutherford backscattering/channeling technique. At proton fluences up to about 2 . 1015 cm-' radiation annealing of the defects is observed which is ascribed to very high defect concentrations in the unimplanted samples. At higher fluences radiation damage occurs but the concentration of radiation induced defects ramains low. There are indications that selenium interstitials or defect complexes with selenium interstitials involved are stable defects at room temperature.Die Gitterschadigung p-leitender CuInSe,-Einkristalle, die mit 10 keV -Protonen im Dosisbereich von 2,5 . 1014 bis 8 . lOI5 cm-2 implantiert wurden, ist mit der Methode der Rutherford-Riickstreuung und der Kanalisierungstechnik untersucht worden. Fur Protonendosen bis zu etwa 2 .cm-* wird eine Strahlenausheilung der Defekte beobachtet, was sehr hohen Defektkonzentrationen in den nicht implantierten Proben zugeschrieben wird. Bei hoheren Dosen tritt eine Strahlenschadigung auf, die Konzentration der strahlungsinduzierten Defekte bleibt jedoch klein. Es gibt Hinweise darauf, da13 entweder Selenatome auf Zwischengitterplatzen oder unter Beteiligung von Selenatomen auf Zwischengitterplatzen gebildete Defektkomplexe bei Raumtemperatur stabil sind.

show abstract

Electrical Properties of CuInSe₂ Single Crystals Implanted with Xenon

Cited by 13 publications

References 22 publications

A Photoacoustic Study of Xenon Implantation in CuInSe₂

A Photoacoustic Study of Xenon Implantation in CuInSe₂

A photoluminescence study of excitonic grade CuInSe2 single crystals irradiated with 6 MeV electrons

Influence of proton implantation on the properties of CuInSe₂ single crystals (I). Ion channeling study of lattice damage

Contact Info

Product

Resources

About

Electrical Properties of CuInSe2 Single Crystals Implanted with Xenon

Cited by 13 publications

References 22 publications

A Photoacoustic Study of Xenon Implantation in CuInSe2

A Photoacoustic Study of Xenon Implantation in CuInSe2

A photoluminescence study of excitonic grade CuInSe2 single crystals irradiated with 6 MeV electrons

Influence of proton implantation on the properties of CuInSe2 single crystals (I). Ion channeling study of lattice damage

Contact Info

Product

Resources

About

Electrical Properties of CuInSe₂ Single Crystals Implanted with Xenon

A Photoacoustic Study of Xenon Implantation in CuInSe₂

A Photoacoustic Study of Xenon Implantation in CuInSe₂

Influence of proton implantation on the properties of CuInSe₂ single crystals (I). Ion channeling study of lattice damage