Electrical properties of CuTlSe2 in the liquid state

Memory switching of ZnGa2Se4 thin films as a new material for phase change memories (PCMs)

“…A stationary state is reached when the heat lost by conduction from the current filament becomes equal to the Joule heat generated in that region. Finally, it is suggested that the memory-switching phenomenon is caused by a phase transition of the material from glassy to crystalline state due to Joule heating, and can be understood in terms of the electrothermal process [35].…”

Devitrification behavior and some electrical properties of GeSeTl chalcogenide glass

“…As shown from the insets of Fig. 9a The observed temperature dependence of the threshold voltage for the preswitching region can be explained in terms of an electrothermal model [27,28], since the temperature of the semiconductor is raised due to Joule-heating and the conduction process in an amorphous material is of an activated type [29], so, the conductivity of the sample will increases when heated. This will allow more current to flow through the heated region and allow more Values of T breakdown and T for the investigated compositions at different temperatures as obtained from Eqs.…”