Electrical properties of epitaxial yttrium iron garnet ultrathin films at high temperatures

Thiéry, Nicolas M.; Naletov, V. V.; Vila, Laurent; Marty, A.; Brénac, A.; Jacquot, Jean-François; Loubens, G. de; Viret, M.; Anane, A.; Cros, Vincent; Youssef, J. Ben; Beaulieu, Nathan; Demidov, V. E.; Divinskiy, B.; Demokritov, S. O.; Klein, O.

doi:10.1103/physrevb.97.064422

Cited by 52 publications

(46 citation statements)

References 42 publications

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“…When the spin accumulation and the magnetization are parallel (perpendicular) the longitudinal resistance state is low (high). A two-point measurement on the films confirmed that the YIG is insulating at room temperature 61,64 . The patterned Hall bar on the YIG (see section II) corresponds to a Pt/YIG structure widely measured before 5,17,21,22,24,30 .…”

Section: Iiib Spin Hall Magnetoresistance Measurementsmentioning

confidence: 85%

Synthetic Antiferromagnetic Coupling Between Ultrathin Insulating Garnets

et al. 2018

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The use of magnetic insulators is attracting a lot of interest due to a rich variety of spindependent phenomena with potential applications to spintronic devices. Here we report ultrathin yttrium iron garnet (YIG) / gadolinium iron garnet (GdIG) insulating bilayers on gadolinium iron garnet (GGG). From spin Hall magnetoresistance (SMR) and X-ray magnetic circular dichroism measurements, we show that the YIG and GdIG magnetically couple antiparallel even in moderate in-plane magnetic fields. The results demonstrate an allinsulating equivalent of a synthetic antiferromagnet in a garnet-based thin film heterostructure and could open new venues for insulators in magnetic devices. As an example, we demonstrate a memory element with orthogonal magnetization switching that can be read by SMR.

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Section: Iiib Spin Hall Magnetoresistance Measurementsmentioning

confidence: 85%

Synthetic Antiferromagnetic Coupling Between Ultrathin Insulating Garnets

et al. 2018

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“…The effect of a Pt overlayer proves that the interfacial coupling with this heavy metal is efficient. In fact, similar batches of ultrathin LPE grown YIG films have already been used to study the transport of angular momentum in non-local YIG/Pt devices using spin-to-charge interconversion [40], [41].…”

Section: Discussionmentioning

confidence: 99%

Temperature Dependence of Magnetic Properties of a Ultrathin Yttrium-Iron Garnet Film Grown by Liquid Phase Epitaxy: Effect of a Pt Overlayer

et al. 2018

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Liquid phase epitaxy of an 18 nm thick Yttrium Iron garnet (YIG) film is achieved. Its magnetic properties are investigated in the 100 -400 K temperature range, as well as the influence of a 3 nm thick Pt overlayer on them. The saturation magnetization and the magnetocrystalline cubic anisotropy of the bare YIG film behave similarly to bulk YIG. A damping parameter of only a few 10 −4 is measured, together with a low inhomogeneous contribution to the ferromagnetic resonance linewidth. The magnetic relaxation increases upon decreasing temperature, which can be partly ascribed to impurity relaxation mechanisms. While it does not change its cubic anisotropy, the Pt capping strongly affects the uniaxial perpendicular anisotropy of the YIG film, in particular at low temperatures. The interfacial coupling in the YIG/Pt heterostructure is also revealed by an increase of the linewidth, which substantially grows by lowering the temperature.

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“…electrical resistivity that decreases exponentially with increasing temperature following an activated behavior. As shown in 34 , at 340 K, however, the electrical resistivity of YIG remains larger than 10 6 Ω • cm and thus the YIG can still be considered a good insulator (R > 30 GΩ) over the current range explored herein. The lateral device is biased by an in-plane magnetic field, H 0 set at a variable azimuthal angle ϕ (or its inverse ϕ = ϕ + 180 • ) with respect to the x-axis ( see FIG.1a).…”

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confidence: 85%

“…We observe that the pulse method allows to keep the absolute temperature of YIG below 340 K 33 at the maximum current amplitude of 2.5 mA. Avoiding excessive heating of the YIG is crucial because, in a joint review paper 34 , it is shown that our epitaxial YIG thin films behave as a large gap semiconductor, with an FIG. 2.…”

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confidence: 93%

“…Clearly the non-local voltage oscillates around an offset, Vŷ, defined as the voltage measured at ϕ = ±90 • . This offset is ascribed to thermoelectric effects at the two Pt|Al contacts of the detector circuit, which are sensitive to any temperature gradient along the y-direction inherently produced by any resistance asymmetry along the Pt wire, which imbalances Joule heating (see discussion in 34 ). By contrast, the anisotropic part of the voltage measured relatively to Vŷ is ascribed to magnons transport.…”

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confidence: 99%

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