Electrical Properties of HCl-Passivated MOS Structure

Section: (Iii)supporting

confidence: 88%

Restrained Diffusion of Boron and Phosphorus in Silicon under HCl ‐ Added Oxygen Atmosphere

Nabeta¹,

Uno²,

Kubo³

et al. 1976

“…This temperature dependence can be considered as follows. As the oxidation temperature decreases, the position of the concentration peak of the chlorine species moves from the SiOe-Si interface to the middle of the SiO2 and the chlorine concentration near the Si-SiO2 interface decreases so the passivation effect of HC1 oxides decreases (5). The ll00~ used in the anneal step of the process is high enough to provide good passivation effects, as shown by Kobayashi et al (5).…”

Section: Ion Densitymentioning

confidence: 90%

“…Conversely the defect density becomes as large as that of dry 02 oxides in a temperature range of over ll00~ (1). On the other hand, only oxides grown at over ll00~ have passivation effects (5). So it is necessary to choose the most suitable method according to each purpose when forming a thin oxide" (4-).…”

Section: Benefits In Hci Oxidesmentioning

confidence: 99%

“…In this paper we present an alternate, atomistic explanation of the feathering of doping striations by considering those aspects of microsegregation that are controlled by the micromorphology of the instantaneous growth interface. In this context we make extensive use of the fact that semiconductor crystals grow exclusively l a y e r -b y -l a y e r (3, 4) via a lateral microscopic growth (L~G) mechanism (5). We have recently (5) demonstrated that additional striations will occur for those crystal growth situations in which the liquid-solid interface is terraced (6)(7)(8).…”

Section: Introductionmentioning

confidence: 99%

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Dual HCl Thin Gate Oxidation Process

Steinberg

1982

The continued need for reliability and quality is inherent in the building of semiconductor devices. Control and reproducibility of the breakdown strength and threshold voltage of the gate oxide insulator is a basic and necessary condition for achieving these results. Alkali ions have been found to be a maj or cause of surface potential instabilities, and the removal of these mobile ion species is very important in the building of strong silicon dioxide insulators. HC1 in particular has been found to be an effective gettering agent when used in small percentages during a thermally grown oxidation process. Further work has been done on the treatment of oxides with a high temperature anneal step using small percentages of HC1 and O2 after an initial oxide has been grown. This leads to the two-step HC1 treatment or dual HC1 cycle. Using the dual HC1 cycle a 56% increase in electric field breakdown has been achieved over a standard one-step oxidation cycle in rupturing the thin oxide under a 20,000 squa:'e rail capacitor. Decreased defect density seen on large capacitors will result in a significant improvement in VLSI ma lufacturing.

“…Conversely, it becomes as large as that of dry 02 oxides in a temperature range of over ll00~ (3). On the other hand, only oxides grown at over that temperature have passivation effects (7). So, it is necessary to choose the most Suitable method according to each purpose when forming a thin oxide.…”

Section: Problems In Hci Oxidation For Thinner Oxidesmentioning

confidence: 99%

A Method of Forming Thin and Highly Reliable Gate Oxides: Two Step Oxidation

Hashimoto

Muramoto

Shiono

et al. 1980

A new two step normalHCl oxidation has been developed as a method of forming thin and highly reliable gate oxides used in MOS LSI's. It consists of initial normalHCl oxidation at low temperature with low normalHCl concentration and following normalHCl treatment at high temperature in a mixture of N2 , O2 , and normalHCl gases. This report mainly covers oxide defect reduction effect and passivation effect of oxides formed by the two step normalHCl oxidation. The oxide defect density depends on the condition of the initial oxidation and following heat‐treatment. Concretely, it is effective, for defect reduction, to use normalHCl oxide as the initial oxide and give it high temperature treatment for over 20 min. The passivation effect depends on the normalHCl concentration and the treatment time at the normalHCl treatment. It became evident that over 90 min treatment is necessary for passivation at 1150°C with 3% normalHCl . According to SIMS analysis, the mechanism of this passivation is fundamentally similar to that of a usual normalHCl oxidation. Many applications may be expected for this two step normalHCl oxidation.