Electrical properties of HfO2 charge trap flash memory with SiO2/HfO2/Al2O3 engineered tunnel layer

Oh, Se Man; You, Hee wook; Kim, Kwan Su; Lee, Young Hie; Cho, Won Ju

doi:10.1016/j.cap.2009.12.005

Cited by 11 publications

(6 citation statements)

References 9 publications

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“…[14]. [21,22], Ab03 [22], Zr02 [23]) have been employed to implement tunnel dielectric in CT-devices. Theoretically, such barriers allow reducing PIE voltages without reliability issues.…”

Section: H Igh-k Band-gap Engineered Barriersmentioning

confidence: 99%

“…Alumina is the material of choice for the blocking oxide [21,22], mainly because of its high band-gap [30], which is believed to ensure a better reliability. Unfortunately, the high-defect density of this material is the root cause of important reliability issues that are 1) the enhanced charge loss in retention conditions and 2) the charge trapping into the alumina during PIE operations.…”

Section: B Blocking Dielectricmentioning

confidence: 99%

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Fundamental reliability issues of advanced charge-trapping Flash memory devices

Larcher

Padovani

2010

2010 17th IEEE International Conference on Electronics, Circuits and Systems

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The basic reliability issues of Charge Trapping (CT) Flash memory devices will be discussed from a physical perspective, highlighting the reliability implications of process and technology innovations introduced to sustain the uninterrupted device scaling down. We will focus on the reliability issues related to the charge localization inside the trapping layer and the high-K band-gap engineered stacks introduced to implement both tunnel and blocking dielectrics.We will describe the physical mechanisms responsible of reliability degradation (data retention, array disturbs, endurance), discussing briefly the issues related to ultra-scaled and vertically stacked 3D Flash memory devices.

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“…[14]. [21,22], Ab03 [22], Zr02 [23]) have been employed to implement tunnel dielectric in CT-devices. Theoretically, such barriers allow reducing PIE voltages without reliability issues.…”

Section: H Igh-k Band-gap Engineered Barriersmentioning

confidence: 99%

Section: B Blocking Dielectricmentioning

confidence: 99%

Fundamental reliability issues of advanced charge-trapping Flash memory devices

Larcher

Padovani

2010

2010 17th IEEE International Conference on Electronics, Circuits and Systems

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“…The work described here falls under non-volatile phase shifters where a number of electro-optical interactions happen and are not necessarily independent. For instance, the oxygen vacancy filamentation affects the optical refractive index via electrical conduction, yet charge traps can also occur [19][20][21] . In addition, the heat generated in nanoscale filamentary regions may morph amorphous transition metal oxides into polycrystalline or crystalline states 22 .…”

Section: Introductionmentioning

confidence: 99%

Energy Efficient Photonic Memory Based on Electrically Programmable Embedded III-V/Si Memristors: Switches and Filters

Cheung,

Tossoun,

Yuan

et al. 2023

Preprint

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We demonstrate non-volatile optical functionality by embedding multi-layer HfO2/Al2O3 memristors with III-V/Si photonics. The wafer-bonded III-V/Si memristor facilitates non-volatile optical functionality for a variety of devices such as Mach-Zehnder Interferometers (MZIs), and (de-)interleaver filters. The MZI optical memristor exhibits non-volatile optical phase shifts > π (ΔngIII-V/Si = 2.70 × 10-3) with ~ 30 dB extinction ratio while consuming 0 electrical power consumption in a true “set-and-forget” operation. We demonstrate 6 non-volatile states with each state capable of 4 Gbps modulation. III-V/Si (de-)interleavers were also demonstrated to exhibit memristive non-volatile passband transformation with full set/reset states. Time duration tests were performed on all devices and indicated non-volatility up to 24 hours and most likely beyond. To the best of our knowledge, we have demonstrated for the first time, non-volatile III-V/Si optical memristors with the largest electric-field driven phase shifts and reconfigurable filters with the lowest power consumption.

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“…16,17) Although lots of investigations have been performed to enhance the initial threshold voltage window of HfO 2 -based CTM by Al doping or stacking with Al 2 O 3 , the improvement of retention characteristics has not been widely studied. [18][19][20][21][22][23] Furthermore, memory devices with low power consumption have been broadly investigated as the portable device market increases. [24][25][26][27][28][29][30][31] Since tunnel FETs (TFETs) derive current by band-to-band tunneling (BTBT) instead of thermionic emission, TFETs can reduce power consumption compared to conventional MOSFETs and have advantages for portable devices and synaptic devices.…”

Section: Introductionmentioning

confidence: 99%

Tunneling oxide engineering for improving retention in nonvolatile charge-trapping memory with TaN/Al₂O₃/HfO₂/SiO₂/Al₂O₃/SiO₂/Si structure

Song

Jang

Min

et al. 2020

Jpn. J. Appl. Phys.

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In this paper, we demonstrate retention improvement in nonvolatile charge-trapping memory cells by tunneling oxide engineering with Al 2 O 3 . By utilizing SiO 2 /Al 2 O 3 /SiO 2 layers for the tunneling oxide, it is shown that the threshold voltage window after 10 years is significantly improved from 0.78 V to 4.18 V through Synopsys Sentaurus technology computer-aided design simulation. In addition, retention improvement from incorporating SiO 2 /Al 2 O 3 /SiO 2 tunneling layers is compared with that using SiO 2 /Si 3 N 4 /SiO 2 tunneling layers. The relationship between charge-trapping layer thickness and trapped charge emission is also investigated. As a result, we open up the possibility of using HfO 2 as a charge-trapping layer with significant reliability enhancement.

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Electrical properties of HfO2 charge trap flash memory with SiO2/HfO2/Al2O3 engineered tunnel layer

Cited by 11 publications

References 9 publications

Fundamental reliability issues of advanced charge-trapping Flash memory devices

Fundamental reliability issues of advanced charge-trapping Flash memory devices

Energy Efficient Photonic Memory Based on Electrically Programmable Embedded III-V/Si Memristors: Switches and Filters

Tunneling oxide engineering for improving retention in nonvolatile charge-trapping memory with TaN/Al₂O₃/HfO₂/SiO₂/Al₂O₃/SiO₂/Si structure

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Electrical properties of HfO2 charge trap flash memory with SiO2/HfO2/Al2O3 engineered tunnel layer

Cited by 11 publications

References 9 publications

Fundamental reliability issues of advanced charge-trapping Flash memory devices

Fundamental reliability issues of advanced charge-trapping Flash memory devices

Energy Efficient Photonic Memory Based on Electrically Programmable Embedded III-V/Si Memristors: Switches and Filters

Tunneling oxide engineering for improving retention in nonvolatile charge-trapping memory with TaN/Al2O3/HfO2/SiO2/Al2O3/SiO2/Si structure

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Tunneling oxide engineering for improving retention in nonvolatile charge-trapping memory with TaN/Al₂O₃/HfO₂/SiO₂/Al₂O₃/SiO₂/Si structure