Electrical properties of <i>p</i>-type GaN:Mg codoped with oxygen

Korotkov, R. Y.; Gregie, J. M.; Wessels, Bruce W.

doi:10.1063/1.1335542

Cited by 97 publications

(60 citation statements)

References 16 publications

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“…Although a single acceptor and single donor are used in this co-doping model, the unbalanced dopant numbers guarantees the partially compensated nature. The theoretical predictions made by these authors were consistent with the experimental observations of an enhanced hole concentration in Be-O co-doping [141], Mg- O co-doping [5,6], and Mg-Si co-doping [142]. The experimental observations and the ADA complex model have been reviewed in details by Korotkov et al [28].…”

Section: Gansupporting

confidence: 70%

“…Group III-nitride semiconductors have attracted significant attention for applications in opto-electronic devices owing to their tunable and direct band-gap, and obtaining low-resistivity p-type GaN is one of the critical issues in the utilization of GaN-based opto-electronic devices [3,5,28,139,140]. Similar to TiO 2 , there is a natural doping limit for GaN, owing to its low-lying VB [100].…”

Section: Ganmentioning

confidence: 99%

“…For example, without any co-dopants, the maximum hole concentration in Mg doped GaN is around 10 17 cm −3 [4]. However, such concentration can be raised for an order of magnitude when Mg and O are co-doped [5,6].…”

Section: Introductionmentioning

confidence: 99%

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A brief review of co-doping

et al. 2016

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Dopants and defects are important in semiconductor and magnetic devices. Strategies for controlling doping and defects have been the focus of semiconductor physics research during the past decades and remain critical even today. Co-doping is a promising strategy that can be used for effectively tuning the dopant populations, electronic properties, and magnetic properties. It can enhance the solubility of dopants and improve the stability of desired defects. During the past 20 years, significant experimental and theoretical efforts have been devoted to studying the characteristics of co-doping. In this article, we first review the historical development of co-doping. Then, we review a variety of research performed on co-doping, based on the compensating nature of co-dopants. Finally, we review the effects of contamination and surfactants that can explain the general mechanisms of co-doping.

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Section: Gansupporting

confidence: 70%

Section: Ganmentioning

confidence: 99%

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A brief review of co-doping

et al. 2016

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“…Several groups have reported successful MOCVD growth of uniform p-type AlGaN epitaxial layers using Mg as a dopant [8][9][10][11][12]. Most of the investigations focus on p-type AlGaN epilayers with an Al fraction that is less than 20%.…”

Section: Introductionmentioning

confidence: 99%

MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35

Yu¹,

Ulker²,

Özbay³

2006

Journal of Crystal Growth

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We present a study on the high performance p-type Al x Ga 1Àx N (x ¼ 0:35) layers grown by low-pressure metalorganic chemical vapor deposition on AlN template/sapphire substrate. The influence of growth conditions on the p-type conductivity of the Al x Ga 1Àx N (x ¼ 0:35) alloy is investigated. From the Hall effect and I-V transmission line model measurements, a p-type resistivity of 3.5 O cm for Al x Ga 1Àx N (x ¼ 0:35) epilayers are achieved. To the best of our knowledge, this is the lowest resistivity ever measured for the uniform p-type AlGaN with Al fraction higher than 0.3. The Mg and impurities (O, C and H) of the atom concentration in the epi-layers are analyzed by means of SIMS depth profiles, which reveal the dependence of impurities incorporation on the III elements and growth temperature. r

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“…Therefore, numerous efforts have been undertaken to mitigate compensation by decreasing donor defects and increasing solubility of the dopants, increase the hole mobility by reducing the scattering rate, and increase the acceptor activation rate by reducing the activation energy through polarization field. The approaches include co-doping of Mg with Si or oxygen, [94,95] Mg delta-doping, [96,97] and Mg-doped AlxGa1-xN/AlN superlattice or AlxGa1-xN/AlyGa1-yN superlattice. [98,99] Some of the reports on the achievement of low p-type resistivities in high Al-molar fraction AlGaN are overviewed below.…”

Section: Doping Considerations In High Al-molar Fraction Alganmentioning

confidence: 99%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Ding¹,

Avrutin²,

Özgür³

et al. 2017

Preprint

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Abstract:We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of this writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice-and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p-and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

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Electrical properties of p-type GaN:Mg codoped with oxygen

Cited by 97 publications

References 16 publications

A brief review of co-doping

A brief review of co-doping

MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

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