Electrical Properties of InAs-Based Nanowires

Thelander, Claes; Björk, Mikael; Mårtensson, Thomas; Larsson, Marcus; Hansen, Adam; Deppert, Knut; Sköld, Niklas; Wallenberg, Reine; Seifert, Werner; Samuelson, Lars

doi:10.1063/1.1812127

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One-dimensional geometry of semiconductor nanowires (NWs) gives rise to many interesting physical properties which are not seen in bulk materials, such as electron quantum confinement [1][2][3][4][5] and optical resonances [6,7]. Furthermore, small diameters of NWs allow for their dislocation-free growth on lattice-mismatched substrates.…”

Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxy of InAs nanowires in SiO₂nanotube templates: challenges and prospects for integration of III–Vs on Si

et al. 2016

View full text Add to dashboard Cite

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires in SiO 2 /Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted vapor-liquid-solid growth enabled by the local conditions inside the nanotube template. The conditions for high yield of vertical nanowires are investigated in terms of the nanotube depth, diameter and V/III flux ratios. We present a model that further substantiates our findings. This work opens new perspectives for monolithic integration of III-Vs on the silicon platform enabling new applications in the electronics, optoelectronics and energy harvesting arena.S Online supplementary data available from stacks.iop.org/NANO/27/455601/mmedia

show abstract

Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxy of InAs nanowires in SiO₂nanotube templates: challenges and prospects for integration of III–Vs on Si

et al. 2016

View full text Add to dashboard Cite

show abstract

Electrical Properties of InAs-Based Nanowires

Cited by 1 publication

References 0 publications

Molecular beam epitaxy of InAs nanowires in SiO₂nanotube templates: challenges and prospects for integration of III–Vs on Si

Molecular beam epitaxy of InAs nanowires in SiO₂nanotube templates: challenges and prospects for integration of III–Vs on Si

Contact Info

Product

Resources

About

Electrical Properties of InAs-Based Nanowires

Cited by 1 publication

References 0 publications

Molecular beam epitaxy of InAs nanowires in SiO2nanotube templates: challenges and prospects for integration of III–Vs on Si

Molecular beam epitaxy of InAs nanowires in SiO2nanotube templates: challenges and prospects for integration of III–Vs on Si

Contact Info

Product

Resources

About

Molecular beam epitaxy of InAs nanowires in SiO₂nanotube templates: challenges and prospects for integration of III–Vs on Si

Molecular beam epitaxy of InAs nanowires in SiO₂nanotube templates: challenges and prospects for integration of III–Vs on Si