Electrical properties of InSb p-n junctions prepared by diffusion methods

Abstract

Abstract. InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have been obtained for the junctions prepared using the two-stage diffusion process.

1/f noise and carrier transport mechanisms in InSb p + -n junctions

“…Further analysis of experimental data in InSb and InAs p-n junctions revealed that inhomogeneities are responsible for the tunneling current at both reverse and forward biases [2,3]. The possible reason for the higher concentration of extended defects in TR1 junctions may be retrograde solubility of cadmium in InSb [5].…”

“…where E 0 = 29 meV is the characteristic energy. Other parameters in the equation (1) are shown in Table [5].…”

“…The dislocation density in the substrates was of the order of 10 2 cm 2 . Earlier, we developed three methods of cadmium diffusion into n-InSb substrates labeled as TR1, TR2 and TR3 [5]. It was shown that the best parameters of diffusion p-n junctions were implemented in two-stage diffusion technique, when after isothermal diffusion of Cd at 380 °C the thermal annealing at 420 °C was carried out for 60 min in a separate ampoule.…”

“…The traps can act as effective recombination centers as well as can enhance interband tunneling, giving rise to excess dark current. The careful analysis of carrier transport mechanisms at medium and moderately large reverse bias voltages has been made in p + -n junctions prepared using Cd diffusion into bulk crystals [2][3][4][5]. It was shown that the total dark current suffer from trap-assisted tunneling (TAT) and surface leakage phenomena.…”

Recombination and Trapping of Excess Carriers in n-InSb

“…Before photoelectrical measurements, the samples were stored in isopropanol to prevent the effect of atmospheric moisture on the surface. Photodiodes were fabricated by the Cd diffusion at tem-peratures near 400 ∘ C. Fabrication details have been described earlier [10]. Direct current (DC) and highfrequency (1 MHz) capacitance measurements were used to characterize the photodiodes.…”