Electrical Properties of Lead Zirconate Titanate Thin Films by a Hydrothermal Method

Abstract

Polycrystalline lead zirconate titanate (PZT) thin films were synthesized on titanium substrates at a processing temperature of 160°C for 16 hours by using a hydrothernal method. The effects of KOH concentration on the phase evolution and morphology of the films were investigated. The as-synthesized PZT thin films using KOH concentration of 4 mol/1 have a dielectric constant and loss of 515 and 0.35 at 103 Hz respectively. The dielectric loss, tan6 and leakage current of hydrothermal PZT thin films were reduced by additional annealing at 100-400°C in air. Moreover, the annealed hydrothermal PZT thin films exhibit typical ferroelectric hysteresis loops at room temperature.