Electrical properties of metal–insulator–semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance

Hugon, M. C.; Delmotte, Franck; Agius, B.; Courant, J.L.

doi:10.1116/1.580859

Cited by 42 publications

(5 citation statements)

References 45 publications

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“…Due to lower energy barrier and higher density of hole traps, the hole injection and transport through silicon dangling bond are more favored than electron injection and transport in the silicon-rich nitride film. Similar phenomena were also found in other work [4,19,20].…”

Section: Charging Behavior Under DC Stresssupporting

confidence: 91%

Study on dielectric charging in low-stress silicon nitride with the MIS structure for reliable MEMS applications

San¹,

Deng²,

Yu³

et al. 2011

J. Micromech. Microeng.

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Charge-induced failure has been recognized as a primary reliability issue in capacitive micro-actuators. In this paper, we present a simple method to assess the effect of dielectric charging on reliability of a capacitive micro-actuator. By capacitance-voltage measurements for a metal-insulator-semiconductor (MIS) structure, the characteristics of dielectric charging can be investigated, and the obtained results can be used to study the charging behavior of a capacitive micro-actuator. An analytical model based on this method has been established. The silicon-rich nitride film was deposited by low-pressure chemical vapor deposition on silicon substrate. The current-voltage and capacitance-voltage measurements exhibit an asymmetric electrical characteristic under different polarity of stress voltage. The charging parameters of the silicon-rich nitride were extracted by the stretched exponential curve fitting method. This charging behavior suggests that silicon-rich nitride can be negatively or positively charged, and the injection and transport of holes are more favored than the injection and transport of electrons. The charge injection from movable electrode plays a dominant role in the dielectric charging of a capacitive micro-actuator. It is expected that the charge accumulation in dielectrics can be eliminated by employing the bipolar square-wave voltage to actuate a capacitive micro-actuator.

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Section: Charging Behavior Under DC Stresssupporting

confidence: 91%

Study on dielectric charging in low-stress silicon nitride with the MIS structure for reliable MEMS applications

San¹,

Deng²,

Yu³

et al. 2011

J. Micromech. Microeng.

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show abstract

“…The electrical resistivity of silicon nitride is governed by the formation of electrically conductive path. It was reported that the electrical resistivity of typical Y–Si–A1 oxynitride glasses was lower than 10 11 Ω cm, while resistivity of 10 16 Ω cm was reported for Si 3 N 4 on n‐type silicon . In those oxide additives doped silicon nitride, the liquid phases remain as amorphous and/or crystalline oxynitride glasses at the multigrain junction and grain boundary films after cooling, so the electrical resistivity was deteriorated by the lower resistivity oxynitride glasses, especially the grain boundary films path.…”

Section: Resultsmentioning

confidence: 99%

“…It was reported that the electrical resistivity of typical Y-Si-A1 oxynitride glasses was lower than 10 11 Ω cm, while resistivity of 10 16 Ω cm was reported for Si 3 N 4 on n-type silicon. 54,55 In those oxide additives doped silicon nitride, the liquid phases remain as amorphous and/or crystalline oxynitride glasses at the multigrain junction and grain boundary films after cooling, so the electrical resistivity was deteriorated by the lower resistivity oxynitride glasses, especially the grain boundary films path. In this work, non-oxide additive was applied, the volume fraction of the glassy phase was reduced, so deterioration from oxynitride glasses was weakened.…”

Section: Mechanical Properties and Electrical Resistivitymentioning

confidence: 99%

ZrSi₂–MgO as novel additives for high thermal conductivity of β‐Si₃N₄ ceramics

et al. 2019

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A novel ZrSi2–MgO system was used as sintering additive for fabricating high thermal conductivity silicon nitride ceramics by gas pressure sintering at 1900°C for 12 hours. By keeping the total amount of additives at 7 mol% and adjusting the amount of ZrSi2 in the range of 0‐7 mol%, the effect of ZrSi2 addition on sintering behaviors and thermal conductivity of silicon nitride were investigated. It was found that binary additives ZrSi2–MgO were effective for the densification of Si3N4 ceramics. XRD observations demonstrated that ZrSi2 reacted with native silica on the Si3N4 surface to generate ZrO2 and β‐Si3N4 grains. TEM and in situ dilatometry confirmed that the as formed ZrO2 collaborated with MgO and Si3N4 to form Si–Zr–Mg–O–N liquid phase promoting the densification of Si3N4. Abnormal grain growth was promoted by in situ generated β‐Si3N4 grains. Consequently, compared to ZrO2‐doped materials, the addition of ZrSi2 led to enlarged grains, extremely thin grain boundary film and high contiguity of Si3N4–Si3N4 grains. Ultimately, the thermal conductivity increased by 34.6% from 84.58 to 113.91 W·(m·K)−1 when ZrO2 was substituted by ZrSi2.

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“…Dielectric films of silicon nitride ceramics play an integral role in nearly every semiconductor device and integrated circuit. Among this Silicon Nitride ceramic is used as a gate dielectric layer, diffusion barrier and optoelectronic-integrated circuits [3][4][5]. Low-density porous silicon nitride [6][7][8][9][10][11][12] ceramic is an important material with properties including low dielectric constant (   = 2.5 to 8, tan δ ≤ 3 × 10 -3 ), good mechanical, high resistance to rain erosion and sand erosion.…”

Section: Introductionmentioning

confidence: 99%

Structural and Electrical Characterization of Sintered Silicon Nitride Ceramic

Khan¹,

Zulfequar²

2011

MSA

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The electrical conduction phenomena, dielectric response and microstructure have been discussed in sintered silicon nitride ceramics at different temperature and frequencies. Microstructure and phase of the sintered samples was investigated by Scanning Electron Microscope (SEM) and X-ray diffractometer (XRD). The electrical conductivity, dielectric constant and dielectric loss increases exponentially with temperature greater than 600 K. The dielectric constant and loss have been measured in the frequency range 100 Hz to 1 MHz. The a.c. conduction studies in the audio frequency range 500 Hz to 1 MHz indicates that the conduction may be due to the electronic hopping mechanism. Silicon Nitride ceramics became dense after sintering. The effect of grain size and role of phase on electrical and dielectric properties have been discussed. These types of samples can be used as a high temperature semi conducting materials for device packaging

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Electrical properties of metal–insulator–semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance

Abstract: Articles you may be interested inLow-temperature electron cyclotron resonance plasma-enhanced chemical-vapor deposition silicon dioxide as gate insulator for polycrystalline silicon thin-film transistors

Cited by 42 publications

References 45 publications

Study on dielectric charging in low-stress silicon nitride with the MIS structure for reliable MEMS applications

Study on dielectric charging in low-stress silicon nitride with the MIS structure for reliable MEMS applications

ZrSi₂–MgO as novel additives for high thermal conductivity of β‐Si₃N₄ ceramics

Structural and Electrical Characterization of Sintered Silicon Nitride Ceramic

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Electrical properties of metal–insulator–semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance

Abstract: Articles you may be interested inLow-temperature electron cyclotron resonance plasma-enhanced chemical-vapor deposition silicon dioxide as gate insulator for polycrystalline silicon thin-film transistors

Cited by 42 publications

References 45 publications

Study on dielectric charging in low-stress silicon nitride with the MIS structure for reliable MEMS applications

Study on dielectric charging in low-stress silicon nitride with the MIS structure for reliable MEMS applications

ZrSi2–MgO as novel additives for high thermal conductivity of β‐Si3N4 ceramics

Structural and Electrical Characterization of Sintered Silicon Nitride Ceramic

Contact Info

Product

Resources

About

ZrSi₂–MgO as novel additives for high thermal conductivity of β‐Si₃N₄ ceramics