Electrical properties of n-type GaPN grown by molecular-beam epitaxy

Abstract

We have investigated electrical properties of n-GaPN layers grown by molecular-beam epitaxy with an rf-plasma source using sulfur and tellurium as dopants. The electron concentration in n-GaPN was about 10 times lower than that in n-GaP. Desorption of dopants from the grown surface by impinging N atoms may be one of the possible causes for the reduced electron concentration. In addition, electron mobilities in GaPN were restricted by ionized impurity scattering even at room temperature (RT). N atoms at N-related levels could trap the electrons, and these ionized N could act as a Columb scattering center for free electrons even at RT.

Electrical and deep-level characterization of GaP1−xNx grown by gas-source molecular beam epitaxy

“…In spite of the fact that we used the same Si doping condition during the epitaxial growth, the shallow donor density decreased with increasing the N composition in the GaP 1−x N x layers. A similar reduction of electron concentration was reported by Furukawa et al 24 in the S and Te-doped GaP 1−x N x layers grown by rf-MBE. They suggest that such reduction of the carrier concentration could arise from the N-impinging desorption of the dopants from the surface during growth, or the electron capture by N-related deep levels.…”

“…[29][30][31] No pronounced change in the activation energy of the Si donor was observed in the GaP 1−x N x alloys. Furukawa et al 24 also reported almost the same activation energy for the S dopant in GaP 1−x N x ͑x =0% − 1.9%͒.…”

“…From the detailed PL analysis, Buyanova et al 18 suggested the existence of deep levels related to N-N pairs and/or N clusters in the GaP 1−x N x alloy. Furukawa et al 24 pointed out the possibility for complex defects consisting of shallow impurities and N atoms. From deep level transient spectroscopy measurements in the GaAsN alloy, in addition, Johnston and Kurtz 32 very recently detected the deep trap whose density correlated with both the N composition and the electron concentration.…”

“…11,12 For design and control of GaPN-based device structures, it is important to understand electrical properties of the GaPN surfaces, including junction characteristics, impurity and/or defect-induced electronic levels, and so on. Although structural and optical properties of GaP 1−x N x have extensively been studied, 7,[13][14][15][16][17][18][19][20][21] there are only a few literatures [22][23][24] on their chemical and electrical properties.…”

Growth of Si/III–V-N/Si structure with two-chamber molecular beam epitaxy system for optoelectronic integrated circuits

“…Ideally, the whole Si and III-V layers are grown by using the two-chamber MBE system. However, in this work, an LED structure was grown by the other conventional single-chamber MBE system, because doping conditions for n-and p-type GaPN layers have been already obtained [8] and an InGaPN/GaPN DH LED has been realized in the previous work with the single-chamber MBE system [7]. In the single-chamber MBE system, Ga, In and P 2 flux were supplied by evaporating metal Ga, metal In and InP polycrystals with conventional thermal effusion cells, respectively.…”