Electrical Properties of Nb-Doped TiO2 Thin Films Deposited by Co-sputtering Process

Abstract

Nb-doped TiO 2 thin films were fabricated by co-sputtering of TiO 2 doped 6%wt by Nb 2 O 5 and Nb targets. The anatase polycrystalline thin films were obtained by post-annealing at 350 o C in vacuum atmosphere. The electrical properties of the film were determined by the Hall method using standard clove-leaf geometry. The results indicated that: when the Nb concentration increases followed by the numbers of electrons increase from 4×10 18 cm -3 to 2.4×10 20 cm -3 . Meanwhile the resistivity fall down from 10 to 3.5×10 -3 Ωcm. It means that this co-sputtering process is good method to improve conducting properties of Nb:TiO 2 thin film. With low resistivity and high optical transmittance (higher than 80% in the visible range), the fabricated thin film can be applicable for transparent conducting electrodes.