Electrical properties of nearly stoichiometric GaAs grown by molecular beam epitaxy at low temperature

Fukushima, Sei; Obata, Tomohiro; Ōtsuka, N.

doi:10.1063/1.1330765

Cited by 13 publications

(4 citation statements)

References 32 publications

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“…Figure 5 shows the relationship between the Hall mobility and the hole concentration in Be-doped p + -GaAs grown on a (100) GaAs substrate and obtained from Hall-effect measurements using the van der Pauw method. Our MLE data fit well into the Hilsum's formula [77], as well as the results reported by other groups for Be-doped GaAs grown by MBE at 600 [78], 530 [79] and 270 • C [80]. The Hall mobility of the MLE layer is nearly equal to that of the MBE-grown layer, even at a very low growth temperature (∼290 • C).…”

Section: Be Doping Characteristics For the P + -Gaas Layersupporting

confidence: 71%

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Ohno

Oyama

2012

Science and Technology of Advanced Materials

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In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm −2 . They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

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Section: Be Doping Characteristics For the P + -Gaas Layersupporting

confidence: 71%

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Ohno

Oyama

2012

Science and Technology of Advanced Materials

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“…Two LT-MQW samples, LT1 and LT2, were grown at 300°C with the above Ga and Al fluxes and the As fluxes being nearly 6.2ϫ10 Ϫ6 Torr with a slight difference between the two samples. According to our earlier study, 22 this flux condition is known to give rise to nearly stoichiometric LT-GaAs samples at a low substrate temperature. Other two MQW samples, LT3 and LT4, were grown at 300°C with the same Ga and Al fluxes as LT1 and LT2 samples but with the As flux being 9.4ϫ10 Ϫ6 and 1.2 ϫ10 Ϫ5 Torr, respectively.…”

Section: Mbe Growth and Structure Characterizationmentioning

confidence: 93%

“…The surface of a LT-GaAs layer, on the other hand, becomes nonspecular when J As /J Ga is less than unity. 22 The value of J As /J Ga at a given position of a nearly stoichiometric LT-MQW sample, therefore, can be determined by its location with respect to the boundary between the specular and non-specular surfaces. The gradient of J As /J Ga along the substrate surface was also estimated from a shift of this boundary between the two samples grown with slightly different values of the ion gauge reading of As fluxes.…”

Section: Mbe Growth and Structure Characterizationmentioning

confidence: 99%

Relaxation processes of photoexcited carriers in GaAs/AlAs multiple quantum well structures grown by molecular beam epitaxy at low temperatures

Rath

Araya

Kumazaki

et al. 2003

Journal of Applied Physics

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The relaxation processes of photoexcited carriers in GaAs/AlAs multiple quantum well structures grown at low temperatures by molecular beam epitaxy were studied by a tunable single-beam femtosecond pump–probe method. Concentrations of singularly ionized antisite arsenic ions, AsGa+, in the quantum wells, which were considered as traps of photoexcited carriers, were estimated from flux conditions and substrate temperatures in the growth. Transient transmittivity of the structures were measured by varying the pump–probe photon energy. The trapping rate of photoexcited carriers, which corresponded to the reciprocal of the carrier lifetime, was derived from the relaxation profile at the pump–probe photon energy close to the exciton resonant excitation energy for each structure. The trapping rate was found to increase linearly with AsGa+ in a lower concentration range and superlinearly in a higher concentration range. Photoluminescence and absorption spectra were observed at room temperature and their correlation to the carrier lifetimes were investigated.

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“…The stoichiometric LT-GaAs layer was grown with a 6.8ϫ 10 −6 -Torr As flux on the basis of the results of an earlier study. 14 The structure of the samples of the third set is shown in Fig. 2͑c͒.…”

Section: Methodsmentioning

confidence: 99%

Relaxation process of photoexcited carriers in GaAs structures with low-temperature-grown layers

Araya

Kato

Ōtsuka

2005

Journal of Applied Physics

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Spatial relaxation processes of photoexcited carriers in GaAs structures are studied by means of photoluminescence spectroscopy. A single GaAs/ Al 0.3 Ga 0.7 As quantum well and a low-temperature-grown GaAs ͑LT-GaAs͒ layer containing a high concentration of excess arsenic are placed in a GaAs structure as optical markers; the former serves as the radiative recombination site, while the latter as the trapping site of photoexcited carriers. The photoluminescence intensity from the quantum well is significantly reduced by the presence of a LT-GaAs layer immediately next to a barrier layer. The effect of the LT-GaAs layer is exponentially enhanced as a thickness of the barrier layer decreases. The results suggest that once an excess As point defect is placed within an extent of a wave function of a photoexcited carrier, trapping of the photoexcited carrier occurs at an extremely fast rate. In a structure where a LT-GaAs is placed at a distant location from the quantum well, the photoluminescence intensity from the quantum well is weakly dependent on the location of the LT-GaAs layer as expected from thermal diffusion of photoexcited carriers to trap sites as semiclassical particles.

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Electrical properties of nearly stoichiometric GaAs grown by molecular beam epitaxy at low temperature

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Cited by 13 publications

References 32 publications

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Relaxation processes of photoexcited carriers in GaAs/AlAs multiple quantum well structures grown by molecular beam epitaxy at low temperatures

Relaxation process of photoexcited carriers in GaAs structures with low-temperature-grown layers

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