Electrical properties of nickel oxide thin films for flow sensor application

Noh, Sang-Soo; Lee, Eung-Ahn; Seo, Jong Mo; Mehregany, Mehran

doi:10.1016/j.sna.2005.08.005

Cited by 20 publications

(7 citation statements)

References 10 publications

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“…Based on the information obtained from the FTIR spectrum, it can be judged that nickel oxide has not yet formed at this stage. Furthermore, there are three diffraction peaks (111) (200) (220), which match with standard card of nickel oxide (Reference code: 01-071-1179 by HighScore Plus 3.0e) of NiO at the patterns of the NiO films annealed at 300 °C, 400 °C, and 500 °C, which demonstrate that these films began to crystalline when the annealing temperature is higher than 300 °C [ 25 ]. All three diffraction peaks show a broadening phenomenon, which is caused by insufficient crystallinity or too small crystallite size.…”

Section: Resultsmentioning

confidence: 82%

Temperature-Controlled Crystal Size of Wide Band Gap Nickel Oxide and Its Application in Electrochromism

et al. 2021

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Nickel oxide (NiO) is a wide band gap semiconductor material that is used as an electrochromic layer or an ion storage layer in electrochromic devices. In this work, the effect of annealing temperature on sol-gel NiO films was investigated. Fourier transform infrared spectroscopy (FTIR) showed that the formation of NiO via decomposition of the precursor nickel acetate occurred at about 300 °C. Meanwhile, an increase in roughness was observed by Atomic force microscope (AFM), and precipitation of a large number of crystallites was observed at 500 °C. X-ray Diffraction (XRD) showed that the NiO film obtained at such a temperature showed a degree of crystallinity. The film crystallinity and crystallite size also increased with increasing annealing temperature. An ultraviolet spectrophotometer was used to investigate the optical band gap of the colored NiO films, and it was found that the band gap increased from 3.65 eV to 3.74 eV with the increase in annealing temperature. An electrochromic test further showed that optical modulation density and coloring efficiency decreased with the increase in crystallite size. The electrochromic reaction of the nickel oxide film is more likely to occur at the crystal interface and is closely related to the change of the optical band gap. An NiO film with smaller crystallite size is more conducive to ion implantation and the films treated at 300 °C exhibit optimum electrochromic behavior.

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Section: Resultsmentioning

confidence: 82%

Temperature-Controlled Crystal Size of Wide Band Gap Nickel Oxide and Its Application in Electrochromism

et al. 2021

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“…For Nb-N [5] or Nb-Si-N [6] thin films, their temperature coefficient of resistance (TCR) was also investigated to understand the relationship between the microstructure and properties as well as the electron transport mechanism. The TCR behaviour in some metal or oxide films such as Pt, Cu, NiO x and Ni-ZrO 2 [7,8] was studied for potential thermal or flow sensors application. In the Ta-Si-N film, different types of bonding such as Ta-Si, Ta-N and Si-N lead to the formation of different phases such as Ta 5 Si 3 , Ta 2 N, TaN and/or Ta x Si y N z (solid solution) rather than a particular compound [4].…”

Section: Introductionmentioning

confidence: 99%

Grain boundary scattering for temperature coefficient of resistance (TCR) behaviour of Ta–Si–N thin films

Chung¹,

Nautiyal²,

Chen³

et al. 2008

J. Phys. D: Appl. Phys.

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In this study, we have investigated the electrical properties of TaxSiyNz thin films deposited by reactive co-sputtering at different nitrogen flow ratios. The electrical resistivity and temperature coefficient of resistance (TCR) were measured by an I–V measurement system including the four-point probe from 30 to 100 °C. The results indicated that the electrical resistivity decreased with increasing temperature, i.e. negative TCR, in each film prepared at different N2 flow ratios. The phase formation of a Ta–Si–N film at different N2 flow ratios (5–30%), as well as the change in microstructure from a symmetric broad peak to an asymmetric peak, was studied by a grazing incident x-ray diffractometer. In view of the fact that the grain size increases with increasing N2 flow ratio, it would be expected that increasing resistivity and magnitude of negative TCR with increasing grain size nature may be due to scattering of electrons by the grain boundaries. It is probable that coarse grained material of Ta–Si–N with amorphous-like microstructure has a higher electrical resistivity due to the high ratio of the grain boundary area and increase in non-metallic amorphous SiNx. The electrical properties of these films are also discussed by the grain boundary scattering model.

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“…The current demand for increasingly more integrated consumer products has created a strong need for ultra low cost materials with exceptional sensitivity and mechanical or thermal stability. At present, temperature sensing is based on composite oxides of transition metals such as manganese, cobalt and nickel [6][7][8][9][10] and account for most negative temperature coefficient (NTC) thermistors [11]. Advanced compositions often belong to the group of spinels and excel by an improved sensitivity and extended ageing time [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Insulator coated metal nanoparticles with a core/shell geometry exhibit a temperature sensitivity similar to advanced spinels

Athanassiou

Mensing

Stark

2007

Sensors and Actuators A: Physical

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Electrical properties of nickel oxide thin films for flow sensor application

Cited by 20 publications

References 10 publications

Temperature-Controlled Crystal Size of Wide Band Gap Nickel Oxide and Its Application in Electrochromism

Temperature-Controlled Crystal Size of Wide Band Gap Nickel Oxide and Its Application in Electrochromism

Grain boundary scattering for temperature coefficient of resistance (TCR) behaviour of Ta–Si–N thin films

Insulator coated metal nanoparticles with a core/shell geometry exhibit a temperature sensitivity similar to advanced spinels

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