1997
DOI: 10.1063/1.366051
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Electrical properties of Pb1-xSnxTe layers with 0⩽x⩽1 grown by molecular beam epitaxy

Abstract: In this work, the electrical properties of Pb1−xSnxTe epitaxial layers with Sn composition covering the whole range were investigated. The samples were grown on (111)BaF2 substrates in a molecular beam epitaxy system using PbTe, SnTe, and Te solid sources. As the alloy composition varies from PbTe to SnTe, the hole concentration increases exponentially from 1017 to 1020 cm−3 for Te-rich sources and from 1017 to 1019 cm−3 for stoichiometric ones. The resistivity of the samples, which depends mainly on their hol… Show more

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Cited by 36 publications
(28 citation statements)
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“…The carrier concentration has almost no temperature dependence, as predicted from the vacancy model, showing no carrier frozen. These p values are in agreement with those reported in the literature [14][15][16], where the lowest hole concentration obtained for SnTe films grown by MBE was 10 19 cm −3 using special growth conditions [16] or Bi doping, which is an ntype dopant [14]. Fig.…”
Section: Resultssupporting
confidence: 82%
“…The carrier concentration has almost no temperature dependence, as predicted from the vacancy model, showing no carrier frozen. These p values are in agreement with those reported in the literature [14][15][16], where the lowest hole concentration obtained for SnTe films grown by MBE was 10 19 cm −3 using special growth conditions [16] or Bi doping, which is an ntype dopant [14]. Fig.…”
Section: Resultssupporting
confidence: 82%
“…As expected, the energy gap increases with temperature, for the sample with xϭ0. 15 16 On the other hand, for the sample with xϭ0.82 (p ϭ1ϫ10 19 cm Ϫ3 ), E g opt is higher than E g by almost 230 meV and the optical energy gap temperature coefficient (dE g opt /dT) is almost three times lower. The observed temperature dependence is a combination of the change in E g and in the position of Fermi level with temperature.…”
mentioning
confidence: 99%
“…Details about the electrical characterization of these layers have been published previously. 15 In this work, we focus attention on the optical characterization of these layers, measuring the temperature dependence of the energy gap. E g has been determined from the transmission spectra, measured using a Fourier-transform infrared spectrometer in the range from 4500 to 800 cm Ϫ1 , with a resolution of 2 cm Ϫ1 .…”
mentioning
confidence: 99%
“…Details about growth and characterization of these layers have been published elsewhere. 5,6 The SLs were grown on the top of 4 m thick PbTe buffer layers. The growth rates of PbTe and SnTe were checked by measuring the thickness of calibration samples and also by measuring reflection high-energy electron diffraction ͑RHEED͒ intensity oscillations.…”
Section: Sample Growthmentioning
confidence: 99%