Electrical Properties of PVP–SiO2–TMSPM Hybrid Thin Films as OFET Gate Dielectric

Bahari, Ali; Shahbazi, Maryam

doi:10.1007/s11664-015-4262-y

Cited by 19 publications

(2 citation statements)

References 30 publications

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“…They exhibit a strong hysteresis, for negative applied voltage, while the corresponding phenomenon for positive applied voltage is weaker. This is unlike the usual symmetrical hysteresis, such as for ferroelectric materials, but it can be found in cases of hybrid materials with crystalline/amorphous phases films, leading to a polarity dependence in the leakage currents [ 49 , 50 ]. The branches of the negative hysteresis connect around −3 V and the coercive voltage is around −2 V. According to the curve shape, it is assumed that two different conduction mechanisms or respective defect types contribute to the conduction characteristics.…”

Section: Resultsmentioning

confidence: 99%

Low-Temperature and UV Irradiation Effect on Transformation of Zirconia -MPS nBBs-Based Gels into Hybrid Transparent Dielectric Thin Films

Muşat

Herbei

Anghel

et al. 2022

Gels

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Bottom-up approaches in solutions enable the low-temperature preparation of hybrid thin films suitable for printable transparent and flexible electronic devices. We report the obtainment of new transparent PMMA/ZrO2 nanostructured -building blocks (nBBs) hybrid thin films (61–75 nm) by a modified sol-gel method using zirconium ethoxide, Zr(OEt)4, and 3-methacryloxypropyl trimethoxysilane (MPS) as a coupling agent and methylmethacrylate monomer (MMA). The effect of low-temperature and UV irradiation on the nBBs gel films is discussed. The thermal behaviors of the hybrid sols and as-deposed gel films were investigated by modulated thermogravimetric (mTG) and differential scanning calorimetry (DSC) analysis. The chemical structure of the resulted films was elucidated by X-ray photoelectron (XPS), infrared (IR) and Raman spectroscopies. Their morphology and crystalline structure were observed by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), and grazing incidence X-ray diffraction. The cured films show zirconia nanocrystallites of 2–4 nm in the hybrid matrix and different self-assembled structures for 160 °C or UV treatment; excellent dielectric behavior, with dielectric constant values within 6.7–17.9, depending on the Zr(OEt)4:MMA molar ratio, were obtained.

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Section: Resultsmentioning

confidence: 99%

Low-Temperature and UV Irradiation Effect on Transformation of Zirconia -MPS nBBs-Based Gels into Hybrid Transparent Dielectric Thin Films

Muşat

Herbei

Anghel

et al. 2022

Gels

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“…The material exhibited favorable interfacial characteristics for the growth of a pentacene layer, and thus a relatively high mobility of 0.50 cm 2 V −1 s −1 was displayed with low hysteresis. Shahbazi et al 228 used the sol−gel method with different amounts of 3-(trimethoxysilyl)propyl methacrylate (TMSPM) as the coupling agent to produce a PVP-SiO 2 -TMSPM hybrid nanocomposite. The in situ chemical bond formation between the filler and matrix led to an enhanced compatibility.…”

Section: Polymer Nanocomposite Gate Dielectricsmentioning

confidence: 99%

Polymer-Based Gate Dielectrics for Organic Field-Effect Transistors

et al. 2019

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Polymer-based gate dielectrics have received growing attention due to their important role in field-effect transistors (OFETs). This review article aims to present the recent progress of polymer dielectrics for high-performance OFET applications. We first discuss the requirements for polymer dielectrics in tailoring the overall performance of OFETs from the perspective of both bulk material properties and surface characteristics of the polymers. On this basis, we introduce the design strategies and desired processing techniques of polymer dielectrics for optimizing the charge transport and stabilizing the operation of OFETs. Then, we highlight the recent advances in polymer-based dielectrics by classifying and comparing different categories of polymeric materials as well as polymer nanocomposites, and focus is also given to elucidating the critical relationships between polymer structures, gate dielectric properties and OFET performance. Finally, a perspective of future research directions and challenges for polymer dielectrics is provided.

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