Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics

Zhong, Huicai; Heuss, Greg; Suh, You‐Seok; Misra, Veena; Hong, Shin-Nam

doi:10.1007/s11664-001-0164-2

Cited by 19 publications

(12 citation statements)

References 20 publications

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“…The first method was a conventional ALD using H 2 Ru has several good properties such as good etching property and high thermal and chemical stability. (174,175) Recently, Ru is receiving extensive attention due to its good properties as electrode in DRAM applications, (93) a metal gate electrode for CMOS, (176) and a potential seed layer for direct plating of Cu electrodeposition in interconnect applications (89) . A simple way of depositing metallic Ru by ALD has been reported recently.…”

Section: Ni Ru Pt Almentioning

confidence: 99%

Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing

Kim

2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

545

388

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Atomic layer deposition (ALD) has been studied for several decades now, but the interest in ALD of thin metal/nitrides films has increased only recently. This is driven by the need for highly conformal nano-scale thin films in modern semiconductor device manufacturing technology. ALD is a very promising deposition technique with the ability to produce thin films with excellent conformality and compositional control with atomic scale dimensions. However, the application of ALD to metals and nitrides in real semiconductor device processes requires a deeper understanding about the underlying deposition process as well as the physical and electrical properties of the deposited films. This paper reviews the current research efforts in ALD for metal and nitride films as well as their applications in modern semiconductor device fabrication.

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Section: Ni Ru Pt Almentioning

confidence: 99%

Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing

Kim

2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

545

388

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“…In addition, nanocrystalline (nc) conductive materials, such as metals, indium tin oxide (ITO), or zinc oxide (ZnO), can be embedded into the high-k film to enhance the electron or hole trapping capability (6)(7)(8). Among many available conductive oxides, ruthenium oxide (RuO) is popular because it has excellent diffusion barrier quality, good chemical and thermal stability, and a high work-function (~5eV) that can serve as a deep charge trapping well for the nonvolatile memory function (9)(10)(11)(12). Therefore, the MOS capacitor with the nc-RuO embedded ZrHfO high-k thin films is expected to exhibit good nonvolatile memory characteristics.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of Charge Storage in nc-RuO Embedded ZrHfO High-k Films

Lin¹,

Kuo²

2008

ECS Trans.

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The charge trapping characteristics of the MOS capacitor composed of the nanocrystalline ruthenium oxide embedded Zr-doped HfO2 gate dielectric on the p-type silicon wafer has been studied. The memory function is contributed by hole trapping during the forward sweep as well as electron trapping during the backward sweep when the starting voltage is high. The trapped holes could not be totally eliminated unless a large positive voltage is applied in the backward sweep process. Holes are strongly trapped at the nanocrystal site and loosely trapped at its interface with the high-k material while most electrons are trapped at the nanocrystal site.

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“…8,9 Ruthenium oxide (RuO) is a conductive oxide with excellent diffusion barrier quality, good chemical and thermal stability, and a high work function (∼5 eV), which makes it a good deep charge trapping medium in the dielectric film. [10][11][12][13] Previously, Maikap et al 14 reported that nc-RuO could be included in the HfO 2 /Al 2 O 3 high-k film using the atomic layer deposition (ALD) method. Authors have also demonstrated that excellent memory functions were obtained with the nc-RuO embedded ZrHfO film prepared by the sputter deposition method followed by a post deposition annealing (PDA) step.…”

mentioning

confidence: 99%

Charge Trapping and Detrapping in nc-RuO Embedded ZrHfO High-k Thin Film for Nonvolatile Memory Applications

Lin

Kuo

2012

J. Electrochem. Soc.

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The charge trapping and detrapping characteristics of the nc-RuO embedded Zr-doped HfO 2 (ZrHfO) high-k MOS capacitor have been studied. The memory function of the capacitor is mainly contributed by hole trapping during the forward sweep from −9 V to +9 V and electron trapping during the backward sweep from +9 V to −9 V. The time-and bias-dependent stress test results show that the hole-trapping efficiency is higher than the electron-trapping efficiency due to different charge trapping sites and supply mechanisms. In order to delineate the detailed mechanisms, samples were characterized with the frequency-dependent conductancevoltage curves, relaxation currents, ramp-relax current measurements, and retention characteristics. Although most electrons are deeply trapped in the bulk nc-RuO sites, a portion of holes are loosely trapped at the nc-RuO/ZrHfO interface due to the lost of the short-term retention capability. The deeply-trapped holes and electrons were strongly held for a long period. The nanocrystals embedded high-k thin film is a potentially important gate dielectric structure for the high-density floating-gate nonvolatile memory due to the high charge storage capability, low operation power, and long retention time.1-3 Based on the same equivalent oxide thickness (EOT), the HfO 2 high-k film has a thicker physical thickness than SiO 2 . In addition, HfO 2 has lower electron and hole energy barriers with respect to Si than SiO 2 , i.e., 1.5 eV and 3.4 eV, vs. 3.5 eV and 4.3 eV, respectively. 4 Previously, it was reported that the sputter deposited Zr-doped HfO 2 (ZrHfO) film showed a higher amorphous-to-polycrystalline crystallization temperature and better interface quality than the undoped HfO 2 .5 An ultra thin ZrHfO layer, e.g., EOT∼1 nm, was successfully prepared into a MOS capacitor. 6 Separately, it has been demonstrated that conductive materials, such as metals, indium tin oxide (ITO), or zinc oxide (ZnO), can be prepared into the nanocrystalline (nc) form and embedded in the high-k film as the electron-or hole-trapping medium.7-9 The charge trapping characteristics in this kind of device are closed related to the embedded nanocrystal material. For example, the nc-ITO embedded device prefers to trap holes while the nc-ZnO embedded device traps electrons or holes depending on the polarity of the gate voltage. 8, 9 Ruthenium oxide (RuO) is a conductive oxide with excellent diffusion barrier quality, good chemical and thermal stability, and a high work function (∼5 eV), which makes it a good deep charge trapping medium in the dielectric film.10-13 Previously, Maikap et al. 14 reported that nc-RuO could be included in the HfO 2 /Al 2 O 3 high-k film using the atomic layer deposition (ALD) method. Authors have also demonstrated that excellent memory functions were obtained with the nc-RuO embedded ZrHfO film prepared by the sputter deposition method followed by a post deposition annealing (PDA) step.15 Although the basic memory function has been demonstrated, the detailed charge trapping and retention...

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Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics

Cited by 19 publications

References 20 publications

Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing

Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing

Mechanism of Charge Storage in nc-RuO Embedded ZrHfO High-k Films

Charge Trapping and Detrapping in nc-RuO Embedded ZrHfO High-k Thin Film for Nonvolatile Memory Applications

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