Electrical properties of semi-insulating GaAs irradiated with neutrons

Morvič, M.; Boháček, P.; Betko, J.; Dubecký, F.; Huran, Jozef; Sekacova, M.

doi:10.1016/s0168-583x(02)01360-5

Cited by 9 publications

(1 citation statement)

References 15 publications

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“…Development of a good detector of fast neutrons with high detection efficiency, fast reaction, good energy resolution and high resistance against fast neutrons damage is a challenging task. Semiconductor based detectors, e. g. semi-insulating (SI) GaAs, are perspective due to their pronounced resistance against radiation and neutron damage in combination with favorable detection performance of high energy charged particles, X-and γrays [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Detection of fast neutrons using detectors based on semi-insulating GaAs

et al. 2011

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Detectors with AuZn square Schottky contact of the area of 2.5 × 2.5 mm 2 were fabricated. On the back side, the whole area AuGeNi eutectic ohmic contact was evaporated. The thickness of the base material (semi-insulating GaAs) was 220 µm. The connection of 4 detectors in parallel was tested to get the detection area of 25 mm 2 . The 239 Pu-Be fast neutron source with energies between 0.5 and 12 MeV was used in experimental measurements. We have investigated the optimal thickness of HDPE (high-density polyethylene) conversion layer for fast neutron detection. The spectra of the neutrons were measured by detectors covered by HDPE converter of different thicknesses. The fast neutron detection efficiency proved experimentally was compared with results from simulations performed by MCNPX (Monte Carlo N-Particle eXtended) code.

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Section: Introductionmentioning

confidence: 99%