Electrical properties of silicon and beryllium doped (AlyGa1−y)0.52In0.48P

Abstract

The electrical properties of silicon and beryllium doped (AlyGa1−y)0.52In0.48P grown by gas source molecular beam epitaxy were studied. Unintentionally doped (GaIn)P has a n-type background concentration of 5.1×1014 cm−3 and a free-carrier mobility of ∼3500 cm2/V s at room temperature. Hall measurements of n-(GaIn)P give a linear increase in the free-carrier concentration for values up to 4.0×1018 cm−3. Silicon doping of (GaIn)P and (Al0.7Ga0.3)0.52In0.48P reveals a linear increase in the impurity carrier concentration for values up to 8.0×1018 cm−3 by capacitance–voltage measurements. In contrast, the free electron concentration saturates at a value of 4.8×1017 cm−3 in (Al0.7Ga0.3)0.52In0.48P, due to Fermi-level pinning at the DX level. Beryllium doping of (GaIn)P reveals a linear increase in the Hall free-hole concentration for values up to 1.4×1019 cm−3 with a room-temperature mobility of ∼34 cm2/V s.

Sheet Resistance Optimization in (Al)GaInP Solar Cells for Concentrator Quadruple–Junction Solar Cells

“…The van der Pauw measurement results regarding electron mobility versus carrier concentration for (Al x Ga 1− x ) 0.51 In 0.49 P samples with 0% up to 15% aluminum and doping levels from 1 × 10 16 to 1 × 10 19 cm −3 at room temperature and 77 K are shown together with literature results of MBE– and MOVPE–grown (Al x Ga 1– x ) 0.51 In 0.49 P samples in Figure . [ 26–32 ] The experimentally obtained mobility dataset is in good agreement with existing literature data for MOVPE–grown Ga 0.51 In 0.49 P samples. Contrary to previous results from Steiner et al [ 32 ] we do not observe any significant change in electron mobility with increasing aluminum content up to x = 15%.…”

“…Literature data for Ga 0.51 In 0.49 P electron mobilities are marked in small black symbols; circles and triangles represent MOVPE-and MBE-grown samples, respectively. [26][27][28][29][30][31]33] Colored small circles represent AlGaInP samples from Steiner et al [32] with compositions approximately corresponding to the color code of the AlGaInP samples from this study. The continuous line represents an empirical fit of the data represented with black symbols after Sotodeeh et al [33] Figure 5.…”

The effect of Sb-surfactant on GaInP CuPtB type ordering: assessment through dark field TEM and aberration corrected HAADF imaging

“…On the one hand, the domain size affects the high-energy excitonic peak in low temperature photoluminescence (PL) measurements 13,16 . On the other hand, the presence of ordered domains leads to anisotropy in the minority carrier diffusion length as well as in the layer conductivity 17 and reduces carrier mobility 18 . In spite of the importance of Sb as a surfactant to modulate the order parameter during the growth of GaInP layers, there is no study on the microstructure of partially ordered GaInP alloys when employing Sb as a surfactant thus far in the literature.…”

Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands

“…Such APBs can deteriorate electronic properties as, e.g., the carrier mobilities. 12 Recently, Vantarakis et al 13 investigated, through atomistic Monte Carlo simulations, atomically ordered domains in dome-shaped SiGe nanoislands. They showed that this ordering is a surface-related phenomenon that depends on facet orientation.…”