Electrical Properties of Silicon p-n Junctions Subjected to Nonuniform Deformation

Polyakova, A. L.; Shklovskaya-Kordi, V. V.

doi:10.1007/978-1-4757-1232-2_34

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2020

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“…Today piezoresistive pressure sensors are dominating in the pressure sensing market and attracting a lot of R&D resources. First studies of the piezoeffect in bipolar junction transistors (BJTs) performed in 1960-70s by Rindner et al [1][2][3][4][5] were not related to development of pressure sensors. Piezoeffect was evaluated based on modulation of I-V curves of Si and Ge transistors by pressure applied with help of a needle.…”

Section: Introductionmentioning

confidence: 99%

Development of high-sensitivity pressure sensor with on-chip differential transistor amplifier

Basov

2020

J. Micromech. Microeng.

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A mathematical model of a high-sensitivity pressure sensor with a novel electrical circuit utilizing piezosensitive transistor differential amplifier with negative feedback loop (PDA-NFL) is presented. Circuits utilizing differential transistor amplifiers based on vertical n-p-n and lateral p-n-p transistors are analyzed and optimized for sensitivity to pressure and stability of output signal in operating temperature range. Parameters of fabrication process necessary for modeling of I-V characteristics of transistors are discussed. The results of the model are sufficiently close to the experimental data.

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Section: Introductionmentioning

confidence: 99%

Development of high-sensitivity pressure sensor with on-chip differential transistor amplifier

Basov

2020

J. Micromech. Microeng.

View full text Add to dashboard Cite

show abstract

Electrical Properties of Silicon p-n Junctions Subjected to Nonuniform Deformation

Cited by 1 publication

References 13 publications

Development of high-sensitivity pressure sensor with on-chip differential transistor amplifier

Development of high-sensitivity pressure sensor with on-chip differential transistor amplifier

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