Electrical properties of Sm-doped bismuth titanate thin films prepared on Si (100) by metalorganic decomposition

Low-temperature growth and characterization of neodymium-substituted bismuth titanate nanowires in a highly ordered anodic aluminum oxide template by an AC electrodeposition method on the platinum substrate for ferroelectric applications

“…The leakage current is obviously increased for voltages more than 5 V without any breakdown. The above results suggested that the Nd substitution could be suitable to reduce the leakage current and improve the insulating property of the BNdT nanowires at lower voltages [24][25][26]. respectively.…”