Electrical Properties of Solution-Processed Nanolaminates of ZrO2 and Al2O3 as Gate Insulator Materials for Thin-Film Transistors

Electrical characteristics and reliability of an In-Sn-Zn-O (ITZO) thin film transistor (TFT) using ZrO2 as a high-k gate insulator were investigated. Varying the atomic layer deposition process temperature caused differences in the ZrO2 thin film chemical state and microstructure. Corresponding changes in the electrical properties of the thin film were evaluated. While the ZrO2 thin film deposited at 300 °C exhibited an excellent thin film property, the best TFT performance as measured by subthreshold swing, effective mobility, and on/off ratio was achieved with deposition at 250 °C. The formation of meso-crystalline structure and subsequent low leakage current density enhanced the TFT performance along with the suppression of Coulombic scattering and interface defect formation. Moreover, the reliability of the TFT was demonstrated using both positive and negative bias temperature stress measurements.

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Improved performance and stability of In-Sn-Zn-O thin film transistor by introducing a meso-crystalline ZrO2 high-k gate insulator

Choi

Sheng

Jeong

et al. 2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Electrical Properties of Solution-Processed Nanolaminates of ZrO₂ and Al₂O₃ as Gate Insulator Materials for Thin-Film Transistors

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Improved performance and stability of In-Sn-Zn-O thin film transistor by introducing a meso-crystalline ZrO2 high-k gate insulator

Improved performance and stability of In-Sn-Zn-O thin film transistor by introducing a meso-crystalline ZrO2 high-k gate insulator

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