Electrical Properties of Sputter-Deposited InGaZnO Thin Film Transistors with an Etch Stopper

Kim, Jin-Kuk; Min, Shin Seong; Choi, Jinsung; Seong, Bae Byung; Yun, Eui‐Jung

doi:10.1166/jnn.2017.14022

Cited by 1 publication

(1 citation statement)

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“…The surface morphologies of the modified layer and organic semiconductor are shown in Figure S4, Supporting Information. To further characterize the stability of OTFT devices with very low defect interfaces (see Figure S5 and Table S2, Supporting Information), negative bias stress (NBS) and positive bias stress (PBS) tests were carried out for an N‐type OTFT for 13200 s with a bias voltage of ±1 V. It can be seen from the Supporting Information that the bias stability of N‐type OTFT devices is excellent and that the electrical properties of N‐type OTFT hardly changed when the bias voltage was applied. The threshold voltage offset was negative in all bias stability tests: Δ V TH = −122 mV for PBS and Δ V TH = −55 mV for NBS.…”

Section: Resultsmentioning

confidence: 99%

Room‐Temperature Fabrication of High‐Quality Lanthanum Oxide High‐κ Dielectric Films by a Solution Process for Low‐Power Soft Electronics

Zhao

Gong

Yan

et al. 2019

Adv Elect Materials

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High‐quality dielectric films are indispensable for field‐effect electronic devices to provide high electrical performance. However, deposition of high‐quality dielectric films on flexible substrate remains a challenging task, which greatly limits the electrical performance of flexible or organic field‐effect devices. A room‐temperature deep ultraviolet (DUV) irradiation process is proposed for densification of solution‐processed La2O3 films. It is found that room‐temperature DUV‐La2O3 films not only exhibit leakage and dielectric properties that are comparable to those of high‐temperature annealed‐La2O3 films, but also have very smooth and clean surfaces and excellent bending strain tolerance. The fabricated La2O3 films exhibit a wide band gap (5.78 eV), high dielectric constant (12.68), low leakage density (8.8 × 10−7 A cm−2 at 2 MV cm−1), and high breakdown field strength (3.5 MV cm−1). Organic thin‐film transistors (OTFTs) based on high‐quality solution‐processed La2O3 gate dielectrics show a low operation voltage (≤3 V), low gate leakage current (<10−9 A), and high Ion/Ioff ratio (>105). Based on these room‐temperature‐fabricated high‐performance OTFTs, low‐voltage complementary integrated circuits are successfully fabricated, including complementary inverters and NAND gate circuits. The results demonstrate that room‐temperature DUV‐processed La2O3 films are ideal gate dielectric materials for future flexible and low‐power‐consumption electronic devices.

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Section: Resultsmentioning

confidence: 99%